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參數(shù)資料
| 型號： | TPS5615CPWP |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, PDSO28 |
| 封裝： | PLASTIC, TSSOP-28 |
| 文件頁數(shù)： | 16/25頁 |
| 文件大小： | 387K |
| 代理商： | TPS5615CPWP |
TPS5615, TPS5618, TPS5625, TPS5633
SYNCHRONOUS-BUCK HYSTERETIC REGULATOR CONTROLLER
SLVS177A – SEPTEMBER 1998 – REVISED NOVEMBER 1998
23
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
layout guidelines
Good power supply results will only occur when care is given to proper design and layout. Layout will affect noise
pickup and generation and can cause a good design to perform with less than expected results. With a range
of currents from milliamps to tens or even hundreds of amps, good power supply layout is much more difficult
than most general PCB design. The general design should proceed from the switching node to the output, then
back to the driver section and, finally, place the low-level components. Below are several specific points to
consider before layout of a TPS56xx design begins.
1.
All sensitive analog components should be referenced to ANAGND. These include components connected
to SLOWST, IOUT, OCP, VSENSE, VREFB, VHYST, BIAS, and LOHIB.
2.
Analog ground and drive ground should be isolated as much as possible. Ideally, analog ground will connect
to the ground side of the bulk storage capacitors, on VO, and drive ground will connect to the main ground
plane close to the source of the low-side FET.
3.
Connections from the drivers to the gate of the power FETs should be as short and wide as possible to
reduce stray inductance. This becomes more critical if external gate resistors are not being used.
4.
The bypass capacitor for the DRV regulator should be placed close to the TPS56xx and be connected to
DRVGND.
5.
The bypass capacitor for VCC should be placed close to the TPS56xx and be connected to DRVGND.
6.
When configuring the high-side driver as a floating driver, the connection from BOOTLO to the power FETs
should be as short and as wide as possible. The other pins that also connect to the power FETs, LOHIB
and LOSENSE, should have a separate connection to the FETs, since BOOTLO will have large peak
currents flowing through it.
7.
When configuring the high-side driver as a floating driver, the bootstrap capacitor (connected from BOOT
to BOOTLO) should be placed close to the TPS56xx.
8.
When configuring the high-side driver as a ground referenced driver, BOOTLO should be connected to
DRVGND.
9.
The bulk storage capacitors across VI should be placed close to the power FETs. High-frequency bypass
capacitors should be placed in parallel with the bulk capacitors and connected close to the drain of the
high-side FET and close to the source of the low-side FET.
10. High-frequency bypass capacitors should be placed across the bulk storage capacitors on VO.
11. HISENSE and LOSENSE should be connected very close to the drain and source, respectively, of the
high-side FET. HISENSE and LOSENSE should be routed very close to each other to minimize
differential-mode noise coupling to these traces.
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