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參數(shù)資料
| 型號： | TPS54672PWP |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 260K |
| 代理商： | TPS54672PWP |
TPS54611, TPS54612, TPS54613
TPS54614, TPS54615, TPS54616
SLVS400A
–
AUGUST 2001
–
REVISED JANUARY 2002
5
www.ti.com
electrical characteristics, T
J
=
–
40
°
C to 125
°
C, V
I
= 3 V to 6 V (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
See Note 1
26
dB
Error amplifier unity gain bandwidth
See Note 1
3
5
MHz
Error amplifier common mode input voltage range
Powered by internal LDO (see Note 1)
0
VBIAS
V
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding deadtime)
10-mV overdrive (see Note 1)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.95
1.20
1.40
V
Enable hysteresis voltage, SS/ENA
See Note 1
0.03
V
μ
s
ms
μ
A
mA
Falling edge deglitch, SS/ENA
See Note 1
2.5
Internal slow-start time
2.6
3.35
4.1
Charge current, SS/ENA
SS/ENA = 0V
3
5
8
Discharge current, SS/ENA
SS/ENA = 1.3 V, VI = 1.5 V
1.5
2.3
4.0
POWER GOOD
Power good threshold voltage
VSENSE falling
90
%VO
%VO
μ
s
V
μ
A
Power good hysteresis voltage
See Note 1
3
Power good falling edge deglitch
See Note 1
35
Output saturation voltage, PWRGD
I(sink) = 2.5 mA
VI = 5.5 V
0.18
0.3
Leakage current, PWRGD
1
CURRENT LIMIT
Current limit
VI = 3 V
VI = 6 V
(see Note 1)
7.2
10
A
(see Note 1)
10
12
Current limit leading edge blanking time
100
ns
Current limit total response time
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point
See Note 1
135
150
165
C
Thermal shutdown hysteresis
See Note 1
10
OUTPUT POWER MOSFETS
rDS(on)
Power MOSFET switches
IO = 3 A, VI = 6 V (see Note 4)
IO = 3 A, VI = 3 V (see Note 4)
26
36
47
65
m
NOTES:
1: Specified by design
4: Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design.
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