參數(shù)資料
型號(hào)： TPS51020DBTR
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： DUAL SWITCHING CONTROLLER, 450 kHz SWITCHING FREQ-MAX, PDSO30
封裝： GREEN, PLASTIC, TSSOP-30
文件頁數(shù)： 24/29頁
文件大?。?/td> 672K
代理商： TPS51020DBTR
TPS51020
SLUS564C JULY 2003 REVISED OCTOBER 2008
4
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
TA = 40°C to 85°C, 4.5 V < VIN < 20 V, CVIN = 0.1 F, CVREG5 = 2.2 F, CREF_X = 0.01 F, PGOOD = 0.2 V, ENBLx = DDR = VIN,
INVx = COMPx, RSSTRTx = OPEN, TRIP1 = TRIP2 = VIN, LLx = GND, VBSTx = LLx+5, C(OUTx_U, OUTx_D)=1 nF, REG5_IN = 0V, GND =
OUTGNDx = 0 V, VO1_VDDQ = VO2 = 0 V (unless otherwise stated)
PARAMETER
UNIT
MAX
TYP
MIN
TEST CONDITIONS
REF_X REFERENCE VOLTAGE
VREF10
10-V reference voltage
VIN = 14 V,
IOUT = 0 A
8.5
10.0
11.0
V
VLD10
Load regulation
0 mA
≤ IOUT ≤ 2 mA,
VIN = 18 V
-12%
-20%
VLN10
Line regulation
IOUT = 100 A,
14 V
≤VIN ≤28 V
5%
VREFVTT
VTT reference voltage
DDR = 0 V wrt VO1_VDDQ input divided by 2
VVO1 = 2.5 V
1.5%
VREFVTT
VTT reference load regulation
0 mA
≤ IO ≤ 3 mA
0.75%
POWERGOOD COMPARATORS
VTHDUAL(PG) PGOOD threshold (dual mode)
Undervoltage PGOOD
765
786
808
mV
VTHDUAL(PG) PGOOD threshold (dual mode)
Overvoltage PGOOD
892
920
945
mV
VTHDDR(PG) PGOOD threshold (DDR)
Undervoltage PGOOD,
VO1_VDDQ = 2.5 V
1.12
1.14
1.16
V
VTHDDR(PG) PGOOD threshold (DDR)
Overvoltage PGOOD,
VO1_VDDQ = 2.5 V
1.28
1.31
1.33
V
TPG(del)
PGOOD delay time
INVx > undervoltage PGOOD,
Delay time from SSTRTx > 1.5 V to PGOOD
going high
2048
clks
DIGITAL CONTROL INPUTS
VIH
High-level input voltage, logic
DDR, ENBL1, ENBL2, SKIP
2.2
V
VIL
Low-level input voltage, logic
DDR, ENBL1, ENBL2, SKIP
0.3
V
IINLEAK
Logic input leakage current
DDR, ENBL1, ENBL2, SKIP= 5 V
|1.0|
A
VO1_VDDQ and VO2
RVOUT
VOx sink impedance
VVOUTx = 0.5 V,
fault engaged
6
10
VVOUTOK
VOx low restart voltage
Fault condition removed, restart
0.25
0.32
0.40
V
VVO2LEAK
VOx input leakage current
DDR= VIN,
VOx = 5 V
|1.0|
A
RVOUT
VO1_VDDQ input impedance
DDR= 0
1.5
M
UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VOVPDUAL
OVP trip output threshold (dual)
Sensed at INVx
945
970
1010
mV
VOVPDDR
OVP trip output threshold (DDR)
VO1_VDDQ = 2.5 V
1.31
1.36
1.41
V
TOVP(del)
OVP propagation delay time(1)
20
s
VUVPDUAL
UVP trip output threshold (dual)
Sensed at INVx
510
553
595
mV
VUVPDDR
UVP trip output threshold (DDR)
VO1_VDDQ = 2.5 V
750
813
875
mV
TUVP(del)
UVP propagation delay time
4096
clks
OVERCURRENT and INPUT VOLTAGE UVLO PROTECTION
ITRIPSNK
TRIPx sink current
VTRIPx = VIN 100 mV,
TA = 25°C
11
13
15
A
ITRIPSRC
TRIPx source current
VTRIPx = 100 mV,
TA = 25°C
10
13
16
A
TCITRIP
TRIP current temperature coeficient(1)
TA = 25°C
4200
ppm/
°C
VOCPHI
High-level OCP comparator offset voltage(1)
0
|3.0|
mV
VOCPLO
Low-level OCP comparator offset voltage(1)
0
|5.0|
mV
VVINUVLO
VIN UVLO trip threshold
REF5V_IN = 4.8 V
3.7
3.9
4.1
V
VVINHYS
VIN UVLO trip hysteresis
100
200
300
mV
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