參數(shù)資料
型號(hào): TPS40074RHLRG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 穩(wěn)壓器
英文描述: 2 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PQCC20
封裝: GREEN, PLASTIC, QFN-20
文件頁(yè)數(shù): 8/41頁(yè)
文件大?。?/td> 765K
代理商: TPS40074RHLRG4
www.ti.com
I
SCP u
C
OUT
V
OUT
t
START
) ILOAD (A)
(8)
R
ILIM +
100
R
DS(onMAX)
I
SCP ) VILIM (ofst) ) 9
R
VDD
I
RVDD ) 4.5 V
109
I
ILIM
W
(9)
I
RVDD + fSW
Qg ) IDD
(10)
I
SCP(max) +
1.09
I
ILIM(max)
R
ILIM * 0.09
R
VDD
I
RVDD * 0.045 ) 50 mV
R
DS(onMIN)
A
(11)
I
SCP(min) +
1.09
I
ILIM(min)
R
ILIM * 0.09
R
VDD
I
RVDD * 0.045 ) 10 mV
R
DS(onMAX)
A
(12)
C
ILIM(max) +
V
OUT
0.2
V
IN
R
ILIM
f
SW
(Farads)
(13)
BOOST AND DBP BYPASS CAPACITANCE
SLUS617B – APRIL 2005 – REVISED OCTOBER 2006
APPLICATION INFORMATION (continued)
The minimum short circuit limit threshold (I
SCP) depends on tSTART, COUT, VOUT, and the load current at turn-on
(I
LOAD).
The short circuit limit programming resistor (RILIM) is calculated from:
where
I
ILIM is the current into the ILIM pin (135 A typical)
V
ILIM(ofst) is the offset voltage of the ILIM comparator (-30 mV typical)
I
SCP is the short-circuit protection current
R
DS(on)MAX is the drain-to-source resistance of the high-side MOSFET
R
VDD is the slew rate limit resistor if used
I
RVDD is the current through RVDD and can be calculated using Equation 10.
where
f
SW is the switching frequency
Q
g(TOT) is the combined total gate charge fro both upper and lower MOSFETs (from MOSFET datasheet)
I
DD is the TPS40074 input current (3.5-mA maximum)
To find the range of the short circuit threshold values use the following equations.
The TPS40074 provides short-circuit protection only. As such, it is recommended that the minimum short circuit
protection level be placed at least 20% above the maximum output current required from the converter. The
maximum output of the converter should be the steady state maximum output plus any transient specification
that may exist.
The ILIM capacitor maximum value can be found from:
Note that this is a recommended maximum value. If a smaller value can be used, it should be to improve
protection. For most applications, consider using half the maximum value shown in Equation 13.
The BOOST capacitance provides a local, low-impedance flying source for the high-side driver. The BOOST
capacitor should be a good quality, high-frequency ceramic capacitor. A minimum value of 100-nF is suggested.
The DBP capacitor has to provide energy storage for switching both the synchronous MOSFET and the
high-side MOSFET (via the BOOST capacitor). The suggested value for this capacitor is 1-F ceramic,
minimum.
16
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