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參數(shù)資料
| 型號： | TPS40054QPWPRQ1 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | PLASTIC, HTSSOP-16 |
| 文件頁數(shù)： | 20/28頁 |
| 文件大?。?/td> | 571K |
| 代理商： | TPS40054QPWPRQ1 |
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DESIGN EXAMPLE SUMMARY
1
2
3
4
16
15
14
13
ILIM
VIN
BOOST
HDRV
KFF
RT
BP5
SYNC
TPS4005xPWP
5
6
7
8
12
11
10
9
SW
BP10
LDRV
PGND
SGND
SS
VFB
COMP
+
+
Si7860
PWP
Si7860
*optional
47 pF
1N4150
Optional
Hysteresis for
UVLO
330
F
330
F
RKFF
71.5 k
13 k
100 pF
0.1
F
22
F
50 V
22
F
50 V
R3
6.49 k
R1
100 k
180 F 180 F
VOUT
VIN
RBIAS
26.7 k
1.0
F
R2
97.6 k
1.0
F
UDG03180
C3
330 pF
1.0 k
CSS
3300 pF
C1
330 pF
C2
22 pF
RT
169 k
2.9
H
1.0
F
499 k
REFERENCES
TPS40054-Q1, TPS40055-Q1, TPS40057-Q1
SLAS482A – AUGUST 2005 – REVISED NOVEMBER 2005
DESIGN EXAMPLE (continued)
Figure 17 shows component selection for the 10-V to 24-V to 3.3-V at 8 A dc-to-dc converter specified in the
design example. For an 8-V input application, it may be necessary to add a Schottky diode from BP10 to BOOST
to get sufficient gate drive for the upper MOSFET. As seen in Figure 8, the BP10 output is about 6 V with the
input at 8 V, so the upper MOSFET gate drive may be less than 5 V.
A Schottky diode is shown connected across the synchronous rectifier MOSFET as an optional device that may
be required if the layout causes excessive negative SW node voltage, greater than or equal to 2 V.
Figure 17. 24 V to 3.3 V at 8-A DC-to-DC Converter Design Example
1. Balogh, Laszlo, Design and Application Guide for High Speed MOSFET Gate Drive Circuits, Texas
Instruments/Unitrode Corporation, Power Supply Design Seminar, SEM-1400 Topic 2.
2. PowerPAD Thermally Enhanced Package Texas Instruments, Semiconductor Group, Technical Brief
27
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