參數(shù)資料
型號(hào)： TPS3838H30
廠商： Texas Instruments, Inc.
英文描述： RECTIFIER BRIDGE 1.5A 100V 50A-ifsm 1.1V-vf 10uA-ir DFS 50/TUBE
中文描述： NANOPOWER監(jiān)控電路
文件頁數(shù)： 6/11頁
文件大?。?/td> 173K
代理商： TPS3838H30
TPS3836E18 / J25 / H30 / L30 / K33
TPS3837E18 / J25 / L30 / K33, TPS3838E18 / J25 / L30 / K33
NANOPOWER SUPERVISORY CIRCUITS
SLVS292A
–
JUNE 2000
–
REVISED JANUARY 2002
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
RESET
(TPS3836)
VDD = 3.3 V,
VDD = 6 V,
VDD = 1.8 V,
VDD = 3.3 V,
VDD = 1.8 V,
VDD = 3.3 V,
VDD = 3.3 V,
VDD = 6 V,
VDD
≥
1.1 V,
IOH =
–
2 mA
IOH =
–
3 mA
IOH =
–
1 mA
IOL =
–
2 mA
IOL = 1 mA
IOL = 2 mA
IOL = 2 mA
IOL = 3 mA
IOL = 50
μ
A
VOH
High level output voltage
High-level output voltage
0.8
×
VDD
V
RESET
(TPS3837)
RESET
(TPS3836/8)
VOL
Low level output voltage
Low-level output voltage
0 4
0.4
V
RESET
(TPS3837)
Power up reset voltage
Power-up reset voltage
(see Note 2)
TPS3836/8
0.2
TPS3837
VDD
≥
1.1 V,
IOH =
–
50
μ
A
0.8
×
VDD
1.66
V
TPS383xE18
1.71
1.74
Negative-going input threshold
voltage (see Note 3)
h ld
TPS383xJ25
2.18
2.25
2.29
VIT
TPS383xH30
TA =
–
TA 40 C to 85 C
2.70
2.79
2.85
V
TPS383xL30
2.56
2.64
2.69
TPS383xK33
2.84
2.93
2.99
1.7 V < VIT <
2.5 V
2.5 V
<
VIT < 3.5 V
3.5 V < VIT
< 5 V
30
Vhys
Hysteresis at VDD input
Hysteresis at VDD in ut
40
mV
50
IIH
High-level input current
High level in ut current
MR
(see Note 4)
MR = 0.7
×
VDD,
VDD = 6 V
–
40
–
60
–
100
μ
A
CT
CT = VDD = 6 V
–
25
25
nA
IIL
Low-level input current
Low level in ut current
MR
(see Note 4)
MR = 0 V,
VDD = 6 V
–
130
–
200
–
340
μ
A
CT
CT = 0 V,
VDD = 6 V
VOH = VDD
VDD < 3 V
VDD > 3 V
–
25
25
nA
IOH
High-level output current
TPS3838
VDD = VIT + 0.2 V,
VDD > VIT,
VDD > VIT,
VDD < VIT
25
nA
220
400
nA
IDD
Supply current
250
450
10
15
μ
A
k
pF
Internal pullup resistor at MR
30
CI
NOTES:
Input capacitance at MR, CT
VI = 0 V to VDD
5
2. The lowest voltage at which RESET output becomes active. tr, VDD
≥
15
μ
s/V
3. To ensure best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1
μ
F) should be placed near the supply terminal.
4. If manual reset is unused, MR should be connected to VDD to minimize current consumption.
相關(guān)PDF資料
PDF描述
TPS3836J Nanopower Supervisry Circuits(微功耗監(jiān)控電路)
TPS3836K Nanopower Supervisry Circuits(微功耗監(jiān)控電路)
TPS3836L Nanopower Supervisry Circuits(微功耗監(jiān)控電路)
TPS3838K NANPOWER SUPERVISORY CIRCUITS(處理器監(jiān)控電路)
TPS3838L NANPOWER SUPERVISORY CIRCUITS(處理器監(jiān)控電路)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS3838J25DBVR 功能描述:監(jiān)控電路 220nA w/ 10ms/200ms Select delay time RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3838J25DBVRG4 功能描述:監(jiān)控電路 220nA w/ 10ms/200ms Select delay time RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3838J25DBVT 功能描述:監(jiān)控電路 220nA w/ 10ms/200ms Select delay time RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3838J25DBVT 制造商:Texas Instruments 功能描述:ULTRA LOW CURRENT SUPERVISORY CIRCUIT
TPS3838J25DBVTG4 功能描述:監(jiān)控電路 220nA w/ 10ms/200ms Select delay time RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
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