參數(shù)資料
型號： TPS2839PWPR
廠商： Texas Instruments, Inc.
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù)： 8/20頁
文件大小： 283K
代理商： TPS2839PWPR
SLVS367A
–
MARCH 2001
–
REVISED JUNE 2001
8
www.ti.com
electrical characteristics over recommended operating virtual junction temperature range,
V
CC
= 12 V, ENABLE = High, C
L
= 3.3 nF (unless otherwise noted) (continued)
low-side driver
PARAMETER
TEST CONDITIONS
MIN
TYP
1.6
MAX
UNIT
V(VDRV) = 4 V,
TJ = 25
°
C,
V(LOWDR) = 0.5 V (src)
V(LOWDR) = 4 V (sink)
V(HIGHDR) = 0.5 V (src)
V(HIGHDR) = 8 V (sink)
V(HIGHDR) = 0.5 V (src)
V(HIGHDR) = 14 V (sink)
V(LOWDR) = 4 V (src)
V(LOWDR) = 0.5 V (sink)
V(LOWDR) = 7 V (src)
V(LOWDR) = 0.5 V (sink)
V(LOWDR) = 11 V (src)
V(LOWDR) = 0.5 V (sink)
1
See Note 2
2
2.4
Peak output current
V(VDRV) = 8 V,
TJ = 25
°
C,
2
2.4
A
See Note 2
2
3.3
V(VDRV) = 14 V (src),
TJ = 25
°
C,
2
3.9
See Note 2
2
4.4
V(VDRV) = 4.5 V,
TJ = 25
°
C
30
8
ro
O tp t resistance
Output resistance
V(VDRV) = 7.5 V,
TJ = 25
°
C
25
7
V(VDRV)= 11.5 V,
TJ = 25
°
C
22
6
LOWDR-to-PGND resistor
250
k
CL = 3.3 nF,
See Note 2
3 3 F
TJ = 125
C,
°
V(VDRV) = 4 V
V(VDRV) = 8 V
V(VDRV) = 14 V
V(VDRV) = 4 V
V(VDRV) = 8 V
V(VDRV) = 14 V
V(VDRV) = 4 V
V(VDRV) = 8 V
V(VDRV) = 14 V
60
50
t /t
tr/tf
Rise and fall time
40
ns
CL = 10 nF,
See Note 2
10 F
TJ = 125
C,
°
110
100
80
Propagation delay time, LOWDR
going high (excluding deadtime)
d l
TJ = 125
C,
See Notes 2 and 3
°
110
ns
tPLH
90
ns
80
ns
NOTES:
2: Ensured by design, not production tested.
3: The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
V
CC
undervoltage lockout
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Start threshold voltage
10.3
V
Stop threshold voltage
7.5
V
Vhys
tpd
td
NOTE 2: Ensured by design, not production tested.
Hysteresis voltage
1
1.5
V
Propagation delay time
50-mV overdrive, See Note 2
300
1000
ns
Falling-edge delay time
See Note 2
2
5
us
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