參數(shù)資料
型號(hào)： TPS2815PW
廠商： Texas Instruments, Inc.
英文描述： DUAL HIGH-SPEED MOSFET DRIVERS
中文描述： 雙高速M(fèi)OSFET驅(qū)動(dòng)器
文件頁(yè)數(shù)： 14/31頁(yè)
文件大小： 663K
代理商： TPS2815PW
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
The TPS2811, TPS2812 and TPS2813 circuits each contain one regulator and two MOSFET drivers. The
regulator can be used to limit V
CC
to between 10 V and 13 V for a range of input voltages from 14 V to 40 V,
while providing up to 20 mA of dc drive. The TPS2814 and TPS2815 both contain two drivers, each of which
has two inputs. The TPS2811 has inverting drivers, the TPS2812 has noninverting drivers, and the TPS2813
has one inverting and one noninverting driver. The TPS2814 is a dual 2-input AND driver with one inverting input
on each driver, and the TPS2815 is a dual 2-input NAND driver. These MOSFET drivers are capable of supplying
up to 2.1 A or sinking up to 1.9 A (see Figures 15 and 16) of instantaneous current to n-channel or p-channel
MOSFETs. The TPS2811 family of MOSFET drivers have very fast switching times combined with very short
propagation delays. These features enhance the operation of today’s high-frequency circuits.
The CMOS input circuit has a positive threshold of approximately 2/3 of V
CC
, with a negative threshold of 1/3 of
V
CC
, and a very high input impedance in the range of 10
9
. Noise immunity is also very high because of the
Schmidt trigger switching. In addition, the design is such that the normal shoot-through current in CMOS (when
the input is biased halfway between V
CC
and ground) is limited to less than 6 mA. The limited shoot-through
is evident in the graphs in Figures 17 and 18. The input stage shown in the functional block diagram better
illustrates the way the front end works. The circuitry of the device is such that regardless of the rise and/or fall
time of the input signal, the output signal will always have a fast transition speed; this basically isolates the
waveforms at the input from the output. Therefore, the specified switching times are not affected by the slopes
of the input waveforms.
The basic driver portion of the circuits operate over a supply voltage range of 4 V to 14 V with a maximum bias
current of 5
μ
A. Each driver consists of a CMOS input and a buffered output with a 2-A instantaneous drive
capability. They have propagation delays of less than 30 ns and rise and fall times of less than 20 ns each.
Placing a 0.1-
μ
F ceramic capacitor between V
CC
and ground
is recommended; this will supply the
instantaneous current needed by the fast switching and high current surges of the driver when it is driving a
MOSFET.
The output circuit is also shown in the functional block diagram. This driver uses a unique combination of a
bipolar transistor in parallel with a MOSFET for the ability to swing from V
CC
to ground while providing 2 A of
instantaneous driver current. This unique parallel combination of bipolar and MOSFET output transistors
provides the drive required at V
CC
and ground to guarantee turn-off of even low-threshold MOSFETs. Typical
bipolar-only output devices don’t easily approach V
CC
or ground.
The regulator, included in the TPS2811, TPS2812 and TPS2813, has an input voltage range of 14 V to 40 V.
It produces an output voltage of 10 V to 13 V and is capable of supplying from 0 to 20 mA of output current. In
grounded source applications, this extends the overall circuit operation to 40 V by clamping the driver supply
voltage (V
CC
) to a safe level for both the driver and the MOSFET gate. The bias current for full operation is a
maximum of 150
μ
A. A 0.1-
μ
F capacitor connected between the regulator output and ground is required to
ensure stability. For transient response, an additional 4.7-
μ
F electrolytic capacitor on the output and a 0.1-
μ
F
ceramic capacitor on the input will optimize the performance of this circuit. When the regulator is not in use, it
can be left open at both the input and the output, or the input can be shorted to the output and tied to either the
V
CC
or the ground pin of the chip.
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參數(shù)描述
TPS2815PWR 功能描述:功率驅(qū)動(dòng)器IC Two input NAND Dual High-Speed RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2815PWRG4 功能描述:功率驅(qū)動(dòng)器IC Two input NAND Dual High-Speed RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2816DBVR 功能描述:功率驅(qū)動(dòng)器IC 2A HS Inverting RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2816DBVRG4 功能描述:功率驅(qū)動(dòng)器IC Inv H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
TPS2816DBVT 功能描述:功率驅(qū)動(dòng)器IC Inv H-S MOSFET Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類(lèi)型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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