參數(shù)資料
型號： TPS2363PFBG4
廠商： TEXAS INSTRUMENTS INC
元件分類： 電源管理
英文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQFP48
封裝： PLASTIC, TQFP-48
文件頁數(shù)： 14/44頁
文件大?。?/td> 840K
代理商： TPS2363PFBG4
www.ti.com
SLUS680B – JANUARY 2006 – REVISED JANUARY 2010
MOSFET RDS(on)
An important parameter in choosing a FET is the on-resistance, RDS(on). The lower the RDS(on), the smaller the
steady state power dissipation of the MOSFET and the easier to maintain the PCI recommended bus voltage.
Low RDS(on) does contribute to excessive currents under short circuit conditions discussed below. The lowest
RDS(on) MOSFETs are the most expensive.
VDSS Voltage Drain to Source
To ensure safe operation of the external MOSFET, the drain-to-source voltage rating should be reasonably
higher than VIN. A 2-to-1 or 3-to-1 ratio of the VDSS to VIN is recommended.
VDSS > 2 x VIN
ID Drain Current (continuous)
To handle steady state loading, the current rating of the MOSFET at the maximum case temperature (usually
70°C
100°C), ID, should be at least:
2 x ITRIP(max) (see RSENSE Calculations Section).
ID at TC(max) > 2 x ITRIP(max)
IDM Pulsed Drain Current (plus PD and SOA)
To handle steady state loading, the current rating of the MOSFET at the maximum case temperature (usually
70°C
100°C), ID, should be at least:
2 x ITRIP(max) (see RSENSE Calculations Section).
ID at TC(max) > 2 x ITRIP(max)
IDM Pulsed Drain Current (plus PD and SOA)
TPS2363 has short circuit output protection. The MOSFET is exposed to large power dissipation for a maximum
of 500 ns. During this time, the current is the supply voltage / (RDS(on) + RSENSE). When an excessive current
spike occurs, the MOSFET carries the trip point current at the supply voltage for the duration of the fault time.
Ratings for maximum power dissipation in the device and safe operating area must be considered along with
IDM calculation in device selection:
IDM, PD, and SOA calculated
VGS Voltage Gate to Source
The gate-to-source voltage rating, VGS of the 3.3-V MOSFET should be at least 15 V because the TPS2363
3.3-V gate voltages can be as high as 15 V and the source voltage can be shorted to ground.
VGS(3.3) > 15 V
The VGS of the 12-V MOSFET should be 15 V because the TPS2363 gate voltage is as low as 0 V when the
source is 15 V.
VGS(12) = 15 V
Copyright 2006–2010, Texas Instruments Incorporated
21
Product Folder Link(s): TPS2363
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TPS2363PFBRG4 功能描述:熱插拔功率分布 PCIExpress Srvr Dual Slot Hot Plug Cntrlr RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
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TPS2370DG4 功能描述:熱插拔功率分布 IEEE 802.3af Pwr Ifc Switch For PoE PD’s RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
TPS2370DR 功能描述:熱插拔功率分布 IEEE 802.3af Pwr Ifc Switch For PoE PD’s RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
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