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參數(shù)資料
| 型號： | TPS1120Y |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 180K |
| 代理商： | TPS1120Y |
TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at T
J
= 25
°
C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1120
TYP
UNIT
MIN
MAX
VGS(th)
VSD
IGSS
Gate-to-source threshold voltage
Source-to-drain voltage (diode forward voltage)
VDS = VGS,
IS = –1 A,
VDS = 0 V,
VDS = –12 V,
VGS = 0 V
VGS = –10 V
VGS = –4.5 V
VGS = –3 V
VGS = –2.7 V
VDS = –10 V,
ID = –250
μ
A
VGS = 0 V
VGS = –12 V
TJ = 25
°
C
TJ = 125
°
C
ID = –1.5 A
ID = –0.5 A
–1
–1.25
–1.50
V
–0.9
V
Reverse gate current, drain short circuited to source
±
100
–0.5
nA
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
μ
A
–10
180
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
291
400
m
ID=
ID = –0.2 A
0 2 A
476
700
606
850
gfs
Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%
Forward transconductance
ID = –2 A
2.5
S
static
PARAMETER
TEST CONDITIONS
TPS1120Y
MIN
UNIT
TYP
MAX
VGS(th)
VSD
Gate-to-source threshold voltage
Source-to-drain voltage (diode forward voltage)
VDS = VGS,
IS = –1 A,
VGS = –10 V
VGS = –4.5 V
VGS = –3 V
VGS = –2.7 V
VDS = –10 V,
ID = –250
μ
A
VGS = 0 V
ID = –1.5 A
ID = –0.5 A
–1.25
V
–0.9
V
180
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
291
m
ID=
ID = –0.2 A
0 2 A
476
606
gfs
Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%
Forward transconductance
ID = –2 A
2.5
S
dynamic
PARAMETER
TEST CONDITIONS
TPS1120, TPS1120Y
MIN
TYP
5.45
UNIT
MAX
Qg
Qgs
Qgd
td(on)
td(off)
tr
tf
trr(SD)
Total gate charge
Gate-to-source charge
VDS = –10 V,
VGS = –10 V,
ID = –1 A
0.87
nC
Gate-to-drain charge
1.4
Turn-on delay time
4.5
ns
Turn-off delay time
VDD = –10 V,
RG = 6
,
RL = 10
See Figures 1 and 2
ID = –1 A,
13
ns
Rise time
,
10
Fall time
Source-to-drain reverse recovery time
2
ns
IF = 5.3 A,
di/dt = 100 A/
μ
s
16
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