參數(shù)資料
型號: TPS1101PW
廠商: Texas Instruments, Inc.
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁數(shù): 5/10頁
文件大?。?/td> 161K
代理商: TPS1101PW
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Figure 1. Switching-Time Test Circuit
RG
DUT
RL
VDD
+
VGS
VDS
Figure 2. Switching-Time Waveforms
td(on)
tr
VDS
td(off)
tf
VGS
90%
10%
0 V
–10 V
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Drain current
vs Drain-to-source voltage
3
Drain current
vs Gate-to-source voltage
4
Static drain-to-source on-state resistance
vs Drain current
5
Capacitance
vs Drain-to-source voltage
6
Static drain-to-source on-state resistance (normalized)
vs Junction temperature
7
Source-to-drain diode current
vs Source-to-drain voltage
8
Static drain-to-source on-state resistance
vs Gate-to-source voltage
9
Gate-to-source threshold voltage
vs Junction temperature
10
Gate-to-source voltage
vs Gate charge
11
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS1101PWLE 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWR 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPS1101PWRG4 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPS1101Y 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101YDW 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS