參數(shù)資料
型號: TPIC2701M
廠商: Texas Instruments, Inc.
英文描述: 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
中文描述: 7通道共源功率DMOS陣列
文件頁數(shù): 4/15頁
文件大?。?/td> 245K
代理商: TPIC2701M
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
clamp diode characteristics, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
TPIC2701
TYP
UNIT
MIN
MAX
VF
VBR
IR
trr(CD)
QRR
Forward on-voltage
IF = 0.5 A
IR = 1
μ
A
VR = 48 V
IF = 0.1 A,
VCD = 48 V,
1
1.5
V
Breakdown voltage
60
V
μ
A
ns
nC
Reverse leakage current
0.05
1
Reverse-recovery time
Total source-drain diode charge
di/dt = 25 A/
s,
See Figure 1
90
100
μ
clamp diode characteristics over operating case temperature range (unless otherwise noted)
(see Note 4)
PARAMETER
TEST CONDITIONS
TPIC2701M
MIN
UNIT
TYP
MAX
VF
Forward voltage
IF = 0.5 A
IR = 1
μ
A,
IR = 1 mA
1
1.5
V
V(BR)
Breakdown voltage
TC = 25
°
C
60
V
IR
Reverse leakage current
VR= 48 V
VR = 48 V
TC = 25
°
C
0.05
1
μ
A
10
trr(SD)
QRR
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
Reverse recovery time, source-to-drain
Total source-to-drain diode charge
IF = 0.1 A,
VCD = 48 V,
di/dt = 25 A/
s,
See Figure 1
TC = 25
°
C
90
100
ns
nC
μ
resistive-load switching characteristics, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
TPIC2701
TYP
UNIT
MIN
MAX
td(on)
td(off)
tr
tf
Qg
Qgs
Qgd
Turn-on delay time
10
Turn-off delay time
VDD = 25 V,
tdis = 10 ns,
RL = 100
See Figure 2
ten = 10 ns,
30
ns
Rise time
,
15
Fall time
5
Total gate charge
VDS = 48 V,
See Figure 3
ID = 0.25 A,
0 25 A
VGS = 10 V,
2.8
3.6
Gate-source charge
1.6
2
nC
Gate-drain charge
1.2
1.6
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