參數(shù)資料
型號(hào)： TPIC2601KTD
廠商： Texas Instruments, Inc.
英文描述： GT 3C 3#16S SKT RECP WALL RM
中文描述： 6通道共源功率DMOS陣列
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 186K
代理商： TPIC2601KTD
TPIC2601
6-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS048A – NOVEMBER 1996 – REVISED JANUARY 1998
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, V
DS
Gate-to-source voltage, V
GS
Continuous drain current, each output, all outputs on, T
C
= 25
°
C
Pulsed drain current, each output, I
O
max, T
C
= 25
°
C (see Note 1 and Figure 7)
Continuous gate-to-source zener diode current, T
C
= 25
°
C
Pulsed gate-to-source zener diode current, T
C
= 25
°
C
Single-pulse avalanche energy, E
AS
, T
C
= 25
°
C (see Figures 4 and 16)
Continuous total power dissipation at (or below) T
A
= 25
°
C
Power dissipation at (or below) T
C
= 75
°
C, all outputs on
Operating virtual junction temperature range, T
J
Operating case temperature range, T
C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–9 V to 18 V
2 A
10 A
. . . . . . . . . . . . . . . . . . .
±
25 mA
±
250 mA
105 mJ
1.7 W
18.75 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40
°
C to 150
°
C
–40
°
C to 125
°
C
–40
°
C to 125
°
C
260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
electrical characteristics, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 5
MIN
TYP
MAX
UNIT
V(BR)DSX
VGS(th)
VGS(th)match
V(BR)GS
V(BR)SG
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
60
V
Gate-to-source threshold voltage
1.5
2.05
2.2
V
Gate-to-source threshold voltage matching
5
40
mV
Gate-to-source breakdown voltage
IGS = 250
μ
A
ISG = 250
μ
A
ID = 2 A,
See Notes 2 and 3
18
V
Source-to-gate breakdown voltage
9
V
VDS(on)
Drain-to-source on-state voltage
VGS = 10 V,
0.5
0.6
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 2A,
See Notes 2 and 3 and Figure 12
VGS = 0,
0.85
1
V
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short circuited to
source
VGS = 10 V,
VDS = 0
20
200
nA
IGSSR
Reverse gate current, drain short circuited to
source
VSG = 5 V,
VDS = 0
10
100
nA
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
VGS = 10 V,
ID =2 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25
°
C
0.25
0.3
TC = 125
°
C
0.4
0.5
gfs
Forward transconductance
VDS = 15 V,
See Notes 2 and 3
and Figure 9
ID = 1 A
1.3
1.95
S
Ciss
Short-circuit input capacitance, common source
180
225
Coss
Short-circuit output capacitance, common
source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
110
138
pF
Crss
Short-circuit reverse transfer capacitance,
common source
80
100
NOTES:
2. Technique should limit TJ – TC to 10
°
C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
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