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參數(shù)資料
| 型號： | TPIC1533DW |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大小： | 312K |
| 代理商： | TPIC1533DW |
TPIC1533
QUAD AND HEX POWER DMOS ARRAY
SLIS064 – OCTOBER 1996
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, Q1A, Q1B, Q2A, Q2B, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 5
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
20
V
VGS(th)
Gate-to-source threshold voltage
1.4
1.7
2.1
V
ID = 5 mA,
ID = 5 mA,
Drain-to-GND current = 250
μ
A
(D1, D2)
VDS = VGS
VDS = VGS
1.65
1.95
2.35
VGS(th)match
Gate-to-source threshold voltage matching
75
mV
V(BR)
Reverse drain-to-GND breakdown voltage
20
V
V(BR)GS
V(BR)SG
Gate-to-source breakdown voltage, Q2C
IGS = 100
μ
A
ISG = 100
μ
A
ID = 3 A,
See Notes 3 and 4
6
V
Source-to-gate breakdown voltage, Q2C
0.7
V
VDS(on)
Drain-to-source on-state voltage
VGS = 10 V,
0.3
0.36
V
VF
Forward on-state voltage, GND-to-VDD1,
GND-to-VDD2
ID = 3 A (D1, D2)
See Notes 3 and 4
1.8
V
VF(SD)
Forward on state voltage source to drain
Forward on-state voltage, source-to-drain
IS = 2 A,
See Notes 3 and 4 and Figure 19
VGS = 0,
1
1.2
V
IS = 3 A,
See Notes 3 and 4 and Figure 19
VGS = 0,
1.1
1.3
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS = 16 V,
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short-circuited
to source
VGS = 16 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short-circuited
to source
VSG = 16 V,
VDS = 0
10
100
nA
Ilkg
Leakage current, VDD1-to-GND, DD2
gate shorted to source
VDGND= 16 V
VDGND = 16 V
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
,
0.5
10
VGS = 10 V,
ID = 2 A,
See Notes 3 and 4
and Figure 9
TC = 25
°
C
0.1
0.12
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
TC = 125
°
C
0.14
0.18
VGS = 10 V,
ID = 3 A,
See Notes 3 and 4
and Figures 7 and 9
VDS = 14 V,
See Notes 3 and 4
TC = 25
°
C
0.1
0.12
TC = 125
°
C
0.14
0.18
gfs
Forward transconductance
ID = 1 A,
1.5
2.5
S
VDS = 14 V,
See Notes 3 and 4 and Figure 13
ID = 1.5 A,
2
3
Ciss
Short-circuit input capacitance, common source
240
Coss
Short-circuit output capacitance, common
source
VDS = 14 V,
f = 1 MHz,
VGS = 0,
See Figure 17
170
pF
Crss
Short-circuit reverse transfer capacitance,
common source
130
α
s
Sense-FET drain current ratio
VDS = 6 V,
ID(Q2C) = 40
μ
A
100
150
200
NOTES:
3. Technique should limit TJ – TC to 10
°
C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
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