
TPIC1533
QUAD AND HEX POWER DMOS ARRAY
SLIS064 – OCTOBER 1996
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 6
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
20
V
VGS(th)
Gate-to-source threshold voltage
1.4
1.7
2.1
V
ID = 5 mA,
Drain-to-GND current = 250
μ
A (D3)
ID = 2 A,
See Notes 3 and 4
VDS = VGS
1.65
1.95
2.35
V(BR)
Reverse drain-to-GND breakdown voltage
20
V
VDS(on)
Drain-to-source on-state voltage
VGS = 10 V,
0.44
0.6
V
VF
Forward on-state voltage, GND-to-VDD3
ID = 1.5 A (D3)
See Notes 3 and 4
1.7
V
VF(SD)
Forward on state voltage source to drain
Forward on-state voltage, source-to-drain
IS = 1.5 A,
See Notes 3 and 4 and Figure 20
VGS = 0
1
1.2
V
IS = 2 A,
See Notes 3 and 4 and Figure 20
VGS = 0
1.1
1.3
VF
Forward on-state voltage, GND-to-GATE 3A,
GND-to-GATE4A, GND-to GATE5A
ID = 1 mA (D4, D5, D6)
0.5
V
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS = 16 V,
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short-circuited to
source
VGS = 16 V,
VDS = 0
10
100
nA
Ilkg
Leakage current, VDD3-to-GND, gate shorted to
source
VDGND= 16 V
VDGND = 16 V
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
VGS = 10 V,
ID = 1.5 A,
See Notes 3 and 4
and Figures 8 and 10
TC = 25
°
C
0.22
0.3
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
TC = 125
°
C
0.32
0.4
VGS = 10 V,
ID = 2 A,
See Notes 3 and 4
and Figure 10
VDS = 14 V,
See Notes 3 and 4
TC = 25
°
C
0.22
0.3
TC = 125
°
C
0.32
0.4
gfs
Forward transconductance
ID = 500 mA,
0.3
0.8
S
VDS = 14 V,
See Notes 3 and 4 and Figure 14
ID = 750 mA,
0.4
0.9
Ciss
Coss
Short-circuit input capacitance, common source
120
Short-circuit output capacitance, common source
VDS = 14 V,
f = 1 MHz,
VGS = 0,
See Figure 18
140
pF
Crss
Short-circuit reverse transfer capacitance,
common source
3: Technique should limit TJ – TC to 10
°
C maximum.
4: These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
80
NOTES: