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| 型號(hào)： | TPIC1504 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 331K |
| 代理商： | TPIC1504 |
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TPIC1504
QUAD AND HEX POWER DMOS ARRAY
SLIS057 – OCTOBER 1996
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
resistive-load switching characteristics, Q1A, Q1B, Q2A, Q2B, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
MIN
TYP
11
MAX
UNIT
td(on)
td(off)
tr
tf
Qg
Qgs(th)
Qgd
LD
LS
Rg
Turn-on delay time
Turn-off delay time
VDD = 14 V,
tdis = 10 ns,
RL = 18.7
See Figure 3
ten = 10 ns,
16
ns
Rise time
,
3
Fall time
4
Total gate charge
VDS= 14 V,
VDS = 14 V, ID= 750 mA,
See Figure 4 and Figure 21
VGS= 10 V,
VGS = 10 V,
1.8
2.5
Threshold gate-to-source charge
0.3
0.4
nC
Gate-to-drain charge
0.5
0.6
Internal drain inductance
7
nH
Internal source inductance
7
Internal gate resistance
10
electrical characteristics, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 6
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
20
V
VGS(th)
Gate-to-source threshold voltage
1.5
1.9
2.2
V
V(BR)
Reverse drain-to-GND breakdown voltage
Drain-to-GND current = 250
μ
A (D3)
ID = 2 A,
See Notes 3 and 4
20
V
V(DS)on
Drain-to-source on-state voltage
VGS = 10 V,
0.3
0.35
V
VF
Forward on-state voltage, GND-to-VDD3
ID = 2 A (D3),
IS = 2 A,
See Notes 3 and 4 and Figure 20
See Notes 3 and 4
1.5
V
VF(SD)
Forward on-state voltage, source-to-drain
VGS = 0
0.85
1.2
V
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS = 16 V,
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short-circuited
to source
VGS = 16 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short-circuited
to source
VSG = 16 V,
VDS = 0
10
100
nA
Ilkg
Leakage current, VDD3
gate shorted to source
VDGND= 16 V
VDGND = 16 V
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
,
0.5
10
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
VGS = 10 V,
ID = 2 A,
See Notes 3
and 4 and
Figure 10
TC = 25
°
C
0.15
0.175
TC = 125
°
C
0.24
0.275
gfs
Forward transconductance
VDS = 14 V,
See Notes 3 and 4 and Figure 14
ID = 1 A,
1
1.7
S
Ciss
Short-circuit input capacitance, common source
160
Coss
Short-circuit output capacitance, common
source
VDS = 14 V,
f = 1 MHz,
VGS = 0,
See Figure 18
220
pF
Crss
Short-circuit reverse transfer capacitance,
common source
3: Technique should limit TJ – TC to 10
°
C maximum.
4: These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
110
NOTES:
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