
TPIC1502
QUAD AND HEX POWER DMOS ARRAY
SLIS054 – OCTOBER 1996
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics, Q1A, Q1B, Q2A, Q2B, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ID = 250
μ
A,
ID = 1 mA,
See Figure 5
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
VGS = 0
VDS = VGS,
20
V
VGS(th)
Gate-to-source threshold voltage
1.5
1.85
2.2
V
VGS(th)match
Gate-to-source threshold voltage matching
ID = 1 mA,
Drain-to-GND current = 250
μ
A
(D1, D2)
VDS = VGS
40
mV
V(BR)
Reverse drain-to-GND breakdown voltage
20
V
V(BR)GS
V(BR)SG
Gate-to-source breakdown voltage, Q2C
IGS = 100
μ
A
IGS = 100
μ
A
ID = 1.5 A,
See Notes 3 and 4
6
V
Source-to-gate breakdown voltage, Q2C
0.7
V
V(DS)on
Drain-to-source on-state voltage
VGS = 10 V,
0.375
0.45
V
VF
Forward on-state voltage, GND-to-VDD1,
GND-to-VDD2
ID = 1.5 A (D1, D2)
See Notes 3 and 4
1.5
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.5 A,
See Notes 3 and 4 and Figure 19
VGS = 0,
0.93
1.2
V
IDSS
Zero gate voltage drain current
Zero-gate-voltage drain current
VDS = 16 V,
VGS = 0
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
0.5
10
IGSSF
Forward gate current, drain short-circuited
to source
VGS = 16 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short-circuited
to source
VSG = 16 V,
VDS = 0
10
100
nA
Ilkg
Leakage current,
VDD2-to-GND, gate shorted to source
VDGND= 16 V
VDGND = 16 V
TC = 25
°
C
TC = 125
°
C
0.05
1
μ
A
DD1
,
0.5
10
rDS(on)
Static drain to source on state resistance
Static drain-to-source on-state resistance
VGS = 10 V,
ID = 1.5 A,
See Notes 3 and 4
and Figure 9
TC = 25
°
C
0.25
0.3
TC = 125
°
C
0.38
0.51
gfs
Forward transconductance
VDS = 14 V,
See Notes 3 and 4 and Figure 13
ID = 750 mA,
0.75
1.2
S
Ciss
Short-circuit input capacitance, common
source
98
Coss
Short-circuit output capacitance, common
source
VDS = 14 V,
f = 1 MHz,
VGS = 0,
See Figure 17
70
pF
Crss
Short-circuit reverse transfer capacitance,
common source
54
α
s
NOTES:
Sense-FET drain current ratio
3. Technique should limit TJ – TC to 10
°
C maximum.
4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
VDS = 6 V,
ID(Q2B) = 1.5 mA
100
150
200
source-to-drain diode characteristics, Q1A, Q2A, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
IS = 750 mA,
VDS= 14 V
VDS = 14 V,
See Figures 1 and 23
MIN
TYP
MAX
UNIT
trr
Reverse-recovery time
VGS = 0,
di/dt = 100 A/
μ
s,
18
ns
QRR
Total diode charge
14
nC