參數(shù)資料
型號： TPCS8204
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
中文描述： 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSIII）
文件頁數(shù)： 3/7頁
文件大?。?/td> 304K
代理商： TPCS8204
TPCS8204
2002-02-14
3
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
10 V, V
DS
=
0 V
±
10
μ
A
Drain cut-OFF current
I
DSS
V
DS
=
20 V, V
GS
=
0 V
10
μ
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
12 V
8
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
200
μ
A
0.5
1.2
V
V
GS
=
2.0 V, I
D
=
4.2 A
24
35
V
GS
=
2.5 V, I
D
=
4.2 A
18
22
Drain-source ON resistance
R
DS (ON)
V
GS
=
4.0 V, I
D
=
4.8 A
13
17
m
Forward transfer admittance
|Y
fs
|
V
DS
=
10 V, I
D
=
3.0 A
7.5
15
S
Input capacitance
C
iss
2160
Reverse transfer capacitance
C
rss
210
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
230
pF
Rise time
t
r
5
Turn-ON time
t
on
13
Fall time
t
f
10
Switching time
Turn-OFF time
t
off
Duty
<
1%, t
w
=
10
μ
s
53
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
22
Gate-source charge 1
Q
gs1
4
Gate-drain (“miller”) charge
Q
gd
V
DD
～
16 V, V
GS
=
5 V, I
D
=
6 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24
A
Forward voltage (diode)
V
DSF
I
DR
=
6 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
～
10 V
0 V
V
GS
5 V
4
I
D
=
3 A
V
OUT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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TPCS8205 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
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