- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358510 > TPCP8BA1 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | TPCP8BA1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 210K |
| 代理商： | TPCP8BA1 |
TPCP8BA1
MOSFET
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
12 V, V
DS
=
0
±
1
μ
A
V
(BR) DSS
I
D
=
1 mA, V
GS
=
0
20
Drain-Source breakdown voltage
V
(BR) DSX
I
D
=
1 mA, V
GS
=
+12 V
8
V
Drain Cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0
1
μ
A
Gate threshold voltage
V
th
V
DS
=
3 V, I
D
=
0.1 mA
0.5
1.1
V
Forward transfer admittance
|Y
fs
|
V
DS
=
3 V, I
D
=
0.65 A
(
4)
1.3
2.7
S
I
D
=
0.65 A, V
GS
=
4 V
(
4)
140
180
I
D
=
0.65 A, V
GS
=
2.5 V
(
4)
200
260
Drain-Source ON resistance
R
DS (ON)
I
D
=
0.65 A, V
GS
=
2.0 V
(
4)
260
460
Input capacitance
C
iss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
370
pF
Reverse transfer capacitance
C
rss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
73
pF
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
116
pF
Turn-on time
t
on
33
Switching time
T u r n - o f f t i m e
t
off
V
DD
=
10 V, I
D
=
0.65 A
V
GS
=
0~
2.5 V, R
G
=
4.7
47
ns
Note 4:
Pulse measurement
Switching Time Test Circuit
(c) V
out
<
(b) V
IN
(a) Test circuit
2.5 V
V
DS (ON)
V
DD
t
r
t
off
10%
90%
0 V
2.5 V
10%
90%
t
on
t
f
R
G
10
μ
s
0
IN
OUT
V
DD
V
DD
=
10 V
R
G
=
4.7
Duty
1%
IN: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
-100
μ
A
for this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS (off)
requires lower voltage than V
th
.
(Relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of -2.5 V or higher to turn on this product.
2003-12-19
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPD11FGPCES0 | PUSHBUTTON SWITCH, SPDT, MOMENTARY, THROUGH HOLE-STRAIGHT |
| TPD21RG-PC2 | PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
| TPD21MG-PC0 | PUSHBUTTON SWITCH, DPST, LATCHED, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
| TPD21RG-RA6 | PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE |
| TPF11CGPC2 | PUSHBUTTON SWITCH, SPST, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPCP8F01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type |
| TPCP8F01(TE85L,F) | 功能描述:MOSFET Transistr PNP 30V 3A MOSFET Nch 20V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8F01(TE85L,F,M | 功能描述:MOSFET Transistor PNP 20V, 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8H01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |
| TPCP8H02 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。