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參數(shù)資料
| 型號： | TP3061 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 118K |
| 代理商： | TP3061 |
1
TP3061
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TP3061 is designed for 960 MHz mobile base stations in both analog and
digital applications. It incorporates high value emitter ballast resistors, gold
metallizations and offers a high degree of reliability and ruggedness. Including
double input and output matching networks, the TP3060 features high
impedances and is easy to match.
Motorola Advanced Amplifier Concept Package
Oxynitride Passivation
Specified 26 Volts, 960 MHz Characteristics
Output Power = 45 Watts
Minimum Gain = 8.0 dB
Efficiency = 50%
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCER
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
48
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
10
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
175
1.0
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1) at 70
°
C Case
R
θ
JC
1.2
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 60 mA, RBE = 75
)
Emitter–Base Breakdown Voltage
(IC = 6.0 mAdc)
Collector–Base Breakdown Voltage (IE = 60 mAdc)
Collector–Emitter Leakage (VCE = 26 V, RBE = 75
)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
V(BR)CER
40
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
V(BR)CBO
ICER
48
—
—
Vdc
—
—
15
mA
(continued)
Order this document
by TP3061/D
SEMICONDUCTOR TECHNICAL DATA
45 W, 960 MHz
UHF POWER
TRANSISTOR
NPN SILICON
CASE 333A–02, STYLE 2
REV 6
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