參數(shù)資料
型號: TP2640
廠商: ELAN Microelctronics Corp .
英文描述: P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-400V,低門限2.0V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
中文描述: P通道增強(qiáng)模式垂直的DMOS場效應(yīng)管(擊穿電壓,為400V,低門限2.0V的,P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管)
文件頁數(shù): 3/4頁
文件大小: 33K
代理商: TP2640
7-149
7
TP2635/TP2640
Typical Performance Curves
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
V
DS
(volts)
I
D
Saturation Characteristics
V
DS
(volts)
I
D
Maximum Rated Safe Operating Area
-1
-1000
-100
-10
-10
-1.0
-0.1
-0.01
-0.001
V
DS
(volts)
I
D
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
-0.8
-0.4
G
F
(
I
D
(amperes)
Power Dissipation vs. Temperature
0
150
100
50
2.0
1.6
1.2
0.8
0.4
0
125
75
°
(
25
T
C
C)
D
P
TO-92
TC = 25
°
C
PD = 1.0W
SO-8
TO-92
T
A
= -55
°
C
V
DS
= -25V
0
-10
-20
-30
-50
-40
0
-2
-4
-6
-10
-8
25
°
C
125
°
C
-1.2
-2.0
-1.6
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
GS
= -10V
-3V
-4V
-6V
-8V
V
GS
= -10V
-8V
-6V
-3V
-4V
SO-8 (pulsed)
T
C
= 25
°
C
TO-92 (DC)
TO-92 (pulsed)
SO-8
(DC)
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