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參數(shù)資料
| 型號(hào)： | TP2510N8-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs |
| 中文描述： | 0.48 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 558K |
| 代理商： | TP2510N8-G |
2
TP2510
Ordering Information
Device
Package Options
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(Ω)
V
GS(TH)
(max)
(V)
-2.4
I
D(ON)
(min)
(A)
-1.5
TO-243AA (SOT-89)
TP2510N8-G
Die*
TP2510
* MIL visual screening available.
-G indicates package is RoHS compliant (‘Green’)
TP2510ND
-100
3.5
Pin Configuration
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Value
BV
DSS
BV
DGS
±
20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
* Distance of 1.6 mm from case for 10 seconds.
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
300°C
Symbol
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Min
-100
-1.0
-
-
Typ
-
-
-
-
-
Max
-
-2.4
5.0
-100
-10
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= 0V, ID = -2.0mA
V
GS
= V
DS
, ID= -1.0mA
V
GS
= V
DS
, ID= -1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating,
T
A
= 125°C
V
GS
= -5.0V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5.0V, ID = -250mA
V
GS
= -10V, ID = -0.75A
V
GS
= -10V, ID = -0.75A
V
DS
= -25V, ID = -0.75A
V
GS
= 0V,
V
= -25V,
f = 1.0 MHz
Electrical Characteristics
(@25°C unless otherwise specified )
I
DSS
Zero gate voltage drain current
-
-
-1.0
mA
I
D(ON)
ON-state drain current
-0.4
-1.5
-0.6
-2.5
5.0
2.0
-
360
80
40
10
-
-
-
-
-
300
-
-
A
R
DS(ON)
Static drain-to-source ON-State
Resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-
7.0
3.5
1.7
-
125
70
25
10
15
20
15
-1.8
-
Ω
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
-
%/
O
C
mmho
300
-
-
-
-
-
-
-
-
-
pF
ns
V
DD
= -25V,
I
D
R
GEN
= 25
V
ns
V
GS
= 0V, I
SD
= -1.0A
V
GS
= 0V, I
SD
= -1.0A
Absolute Maximum Ratings
TO-243AA (SOT-89)
(Top View)
GATE DRAIN SINK
DRAIN
Product Marking
TP5AW
W = Code for Week Sealed
= “Green” Packaging
TO-243AA (SOT-89) N8
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