參數(shù)資料
型號(hào): TP2435NW
廠商: SUPERTEX INC
元件分類: 功率晶體管
英文描述: P-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: DIE
文件頁數(shù): 1/4頁
文件大小: 496K
代理商: TP2435NW
TP2435
Ordering Information
Features
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces
Solid state relays
Linear Amplifiers
Power Management
Analog switches
Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Note: See Package Outline section for dimensions.
Order Number / Package
BV
DSS
/
BV
DGS
-350V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-243AA*
Die**
15
-2.4V
-800mA
TP2435N8
TP2435NW
*
** Die in wafer form.
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Low Threshold
Product marking for TO-243AA:
TP4S
where
= 2-week alpha date code
TO-243AA
(SOT-89)
G
D
S
D
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
相關(guān)PDF資料
PDF描述
TP2502 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-20V,低門限2.4V,P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TP2502 P-Channel Enhancement-Mode Vertical DMOS FETs
TP2502N8 P-Channel Enhancement-Mode Vertical DMOS FETs
TP2502ND P-Channel Enhancement-Mode Vertical DMOS FETs
TP2510N8-G Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
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