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參數(shù)資料
| 型號(hào)： | TP2104ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 455K |
| 代理商： | TP2104ND |
2
TP2104
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
A
= 25
°
C
0.36W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
SOT-23
-0.16A
-0.8A
200
350
-0.16A
-0.8A
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
-0.25A
-1.0A
0.74W
125
170
-0.25A
-1.0A
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
-40
V
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS,
I
D
= -1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -50mA
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
Gate Threshold Voltage
-1.0
-2.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
5.8
6.5
mV/
°
C
-1.0
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
-1
mA
I
D(ON)
R
DS(ON)
ON-State Drain Current
-0.6
A
10.0
6.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.55
1.0
%/
°
C
150
200
m
Input Capacitance
35
60
Common Source Output Capacitance
22
30
pF
Reverse Transfer Capacitance
8
10
Turn-ON Delay Time
4
6
Rise Time
4
8
Turn-OFF Delay Time
5
9
Fall Time
5
8
Diode Forward Voltage Drop
-1.2
-2.0
V
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
Reverse Recovery Time
400
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25
ns
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