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參數(shù)資料
| 型號： | TP0610L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.18A的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓- 60V的，夾斷電流，0.18A的P溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | TP0610L |
Siliconix
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-52426—Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
FaxBack (408)970-5600
www.siliconix.com
2
TP0610L/T
VP0610L/T
BS250
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–70
–60
–60
V
GS
= 0 V, I
D
= –100 A
–45
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –1 mA
–1.9
–1
–2.4
–1
–3.5
–1
–3.5
V
DS
= 0 V, V
GS
=
20 V
10
10
Gate-Body Leakage
I
GSS
T
J
= 125 C
50
nA
V
DS
= 0 V, V
GS
=
15 V
20
Zero Gate Voltage
Drain Current
G t V lt
V
DS
= –48 V, V
GS
= 0 V
–1
–1
I
DSS
T
J
= 125 C
–200
–200
A
V
DS
= –25 V, V
GS
= 0 V
–0.5
V
DS
= –10 V, V
GS
= –4.5 V
–180
–50
On-State Drain Current
c
I
D(on)
V
= –10 V
DS
V
GS
= –10 V
L
–750
–600
mA
T
–220
V
GS
= –4.5 V, I
D
= –25 mA
11
25
Drain-Source
On-Resistance
c
V
= –10 V
GS
I
D
= –0.5 A
L
8
10
10
r
DS(on)
T
J
= 125 C
15
20
20
V
GS
= –10 V
I
D
= –0.2 A
T
6.5
10
10
14
V
DS
= –10 V, I
D
= –0.5 A
L
125
80
80
Forward Transconductance
c
g
fs
V
DS
= –10 V
I
D
= –0.1 A
T
90
60
70
mS
Diode Forward Voltage
V
SD
I
S
= –0.5 A, V
GS
= 0 V
–1.1
V
Input Capacitance
C
iss
15
60
60
Output Capacitance
C
oss
V
DS
= –25 V, V
GS
= 0 V
f = 1 MHz
10
25
25
pF
Reverse Transfer
Capacitance
C
rss
3
5
5
t
ON
8
10
Turn-On Time
t
d(on)
6
10
10
t
r
V
DD
= –25 V, R
L
= 133
–0 18 A V
I
D
–0.18 A, V
GEN
= –10 V
R
G
= 25
10
15
15
ns
t
OFF
8
10
Turn-Off Time
t
d(off)
7
15
15
t
f
8
20
20
Notes
A.
B.
C.
D.
T
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPDS06
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0610L-TR1 | 功能描述:MOSFET 60V 0.18A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610T | 功能描述:MOSFET 60V 0.12A 0.36W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610T-G | 功能描述:MOSFET -60V 100hm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610TT1 | 制造商:SILICONIX 功能描述:* |
| TP0610T-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.12A 3-Pin TO-236 T/R |
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