參數(shù)資料
型號(hào): TP0610K
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 60-V (D-S) MOSFET
中文描述: P通道60V(D-S)MOSFET
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 47K
代理商: TP0610K
TP0610K
Vishay Siliconix
New Product
www.vishay.com
11-4
Document Number: 71411
S-04279
Rev. C, 16-Jul-01
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
Gate-to-Source Voltage (V)
I
D
= 500 mA
I
D
= 200 mA
r
)
1.2
1.5
1
100
1000
0.00
0.3
0.6
0.9
T
J
= 25 C
T
J
= 125 C
Source-Drain Diode Forward Voltage
V
SD
Source-to-Drain Voltage (V)
I
S
10
T
J
=
55 C
V
GS
= 0 V
Threshold Voltage Variance Over Temperature
0.5
V
V
0.3
0.2
0.1
0.0
0.1
0.2
0.3
0.4
50
25
0
25
50
75
100
125
150
I
D
= 250 A
T
J
Junction Temperature ( C)
10
3
10
2
1
10
600
10
1
10
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 350 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.01
0
1
2.5
3
100
600
0.1
P
Single Pulse Power, Junction-to-Ambient
Time (sec)
1.5
2
0.5
1
10
T
A
= 25 C
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
相關(guān)PDF資料
PDF描述
TP0610L CONNECTOR ACCESSORY
TP0610T CONNECTOR ACCESSORY
TP0610T CONNECTOR ACCESSORY
TP0610L P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V,夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管)
TP0610T P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V,夾斷電流-0.12A的P溝道增強(qiáng)型MOSFET晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP0610K_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET
TP0610KL 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET
TP0610KL-TR1 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0610KL-TR1-E3 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0610K-T1 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube