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參數(shù)資料
| 型號(hào)： | TP0205AD |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | TP0205AD |
TP0205A/AD
Vishay Siliconix
New Product
www.vishay.com
11-2
Document Number: 70869
S-04279
—
Rev. B, 16-Jul-01
Parameter
Symbol
Test Condition
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
=
–
10 A
–
20
–
24
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
50 A
–
0.4
–
0.9
–
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
2
100
V
DS
=
–
20 V, V
GS
= 0 V
–
0.001
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
20 V, V
GS
= 0 V, T
J
= 55 C
–
1
A
V
GS
=
–
4.5 V, V
DS
=
–
8.0 V
–
400
On-State Drain Current
a
I
D(on)
V
GS
=
–
2.5 V, V
DS
=
–
5.0 V
–
120
mA
V
GS
=
–
4.5 V, I
D
=
–
180 mA
V
GS
=
–
2.5 V, I
D
=
–
75 mA
2.6
3.8
Drain-Source On-State Resistance
a
r
DS(on)
4.0
5.0
Forward Transconductance
a
g
fs
V
DS
=
–
2.5 V, I
D
=
–
50 mA
200
mS
Diode Forward Voltage
a
V
SD
I
S
=
–
50 mA, V
GS
= 0 V
–
0.7
–
1.2
V
Dynamic
Total Gate Charge
Q
g
350
450
Gate-Source Charge
Q
gs
V
DS
=
–
5.0 V,
V
GS
=
–
4.5 V, I
D
=
–
100 mA
25
pC
Gate-Drain Charge
Q
gd
125
Input Capacitance
C
iss
20
Output Capacitance
C
oss
V
=
–
5.0 V,
V
= 0 V, f = 1 MHz
DS
GS
14
pF
Reverse Transfer Capacitance
C
rss
5
Switching
c
Turn-On Delay Time
t
d(on)
7
12
Rise Time
t
r
V
=
–
3.0 V, R
= 100
I
D
=
–
0.25 A, V
GEN
=
–
4.5 V, R
G
= 10
25
35
Turn-Off Delay Time
t
d(off)
19
30
ns
Fall Time
t
f
9
15
Notes
a.
b.
c.
Pulse test; pulse width
For design only, not subject to production testing.
Switching time is essentially independent of operating temperature.
300 s, duty cycle
2%.
VPOJ
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