TP0202K

Vishay Siliconix

www.vishay.com

4

Document Number: 71609

S-41777—Rev. D, 04-Oct-04

TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)

10

3

10

2

1

10

600

10

1

10

4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

N

T

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 350 C/W

3. T

JM

T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

t

1

t

2

t

1

t

2

Notes:

P

DM

1.2

1.5

1

100

1000

0.00

0.3

V

SD

Source-to-Drain Voltage (V)

0.6

0.9

T

J

= 25 C

T

J

= 150 C

Source-Drain Diode Forward Voltage

I

S

10

T

J

=

55 C

V

GS

= 0 V

Threshold Voltage Variance Over Temperature

V

V

0.3

0.2

0.1

0.0

0.1

0.2

0.3

0.4

0.5

50

25

0

25

50

75

100

125

150

I

D

= 250 A

T

J

Junction Temperature ( C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

50

25

0

25

50

75

100

125

150

On-Resistance vs. Junction Temperature

T

J

Junction Temperature ( C)

V

GS

= 10 V @ 200 mA

V

GS

= 4.5 V @ 50 mA

I

T

J

Junction Temperature ( C)

I

GSS

vs. Temperature

125

150

1

100

1000

25

50

75

100

10

V

GS

= 10 V

V

GS

= 5 V

For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.

r

D

(

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