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參數(shù)資料
| 型號： | TP0101TS |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 35K |
| 代理商： | TP0101TS |
TP0101T/TS
Vishay Siliconix
Document Number: 70229
S-04279
—
Rev. D, 16-Jul-01
www.vishay.com
11-3
–
–
–
–
On-Resistance vs. Drain Current
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
V
GS
–
Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
–
1.5
2.0
2.5
3.0
25 C
T
A
=
–
55 C
125 C
–
2.5 V
–
3 V
V
GS
=
–
5 V
–
1.5 V
–
2 V
0
50
100
150
200
250
300
350
0
3
6
9
12
0.7
0.9
1.1
1.3
1.5
1.7
–
50
0
50
100
150
0
1
2
3
4
5
6
7
0
600
1200
1800
2400
3000
0
1
2
3
4
0
1
2
3
4
5
Gate Charge
Q
g
–
Total Gate Charge (pC)
V
DS
–
Drain-to-Source Voltage (V)
C
oss
C
rss
C
iss
V
DS
=
–
6 V
I
D
=
–
0.5 A
I
D
–
Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
V
GS
=
–
4.5 V
I
D
=
–
0.5 A
T
J
–
Junction Temperature ( C)
V
GS
=
–
2.5 V
V
GS
=
–
4.5 V
–
0.5, 1 V
–
3.5 V
–
4 V
–
4.5 V
I
D
–
I
D
–
C
–
r
D
–
V
G
–
r
D
–
(
N
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
= 0
f = 1 MHz
–
–
–
–
–
–
–
–
–
–
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