參數(shù)資料
型號(hào)： TO-263-5
廠商： Electronic Theatre Controls, Inc.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 71K
代理商： TO-263-5
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-263
TO-220AB
TO-220FP
1.7
1.7
3.3
R
θ
JC
Thermal Resistance Junction to Case Max.
O
C/W
R
θ
JA
Thermal Resistance Junction to Ambient Max.
62
O
C/W
ELectrical Characteristics
(T
J
=25
O
C, unless otherwise specified)
Symbol
V
(BR)DSS
Characteristic
Min.
600
-
-
-
-
2
Typ.
-
-
-
-
-
3
Max.
-
1
50
100
-100
4
Unit
V
uA
uA
nA
nA
V
S
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V, T
j
=125
O
C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.6A)*
Forward Transconductance (V
DS
=15V, I
D
=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
1
1.2
2
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
1498
158
29
14
19
40
26
35.5
8.1
14.1
V
GS
=0V, V
DS
=25V, f=1MHz
pF
(V
DD
=300V, I
D
=6A, R
G
=9.1
,
V
GS
=10V)*
ns
50
-
-
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
nC
L
D
-
4.5
-
nH
L
S
-
7.5
-
nH
*: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
**: Negligible, Dominated by circuit inductance
Characteristic
Min.
-
-
-
Typ.
-
**
266
Max.
1.2
-
-
Units
V
ns
ns
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
S
=6A, V
GS
=0V, T
J
=25
o
C
I
S
=6A, d
IS
/d
t
=100A/us
相關(guān)PDF資料
PDF描述
TO-220FP N-Channel Power Field Effect Transistor
TO-263 N-Channel Power Field Effect Transistor
TO-269AA Case No. TO-269AA Device
TOF15-05S CONNECTOR ACCESSORY
TOF10-05S CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TO263-5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SUGGESTED PAD LAYOUT
TO263-5EV-VREG 功能描述:電源管理IC開發(fā)工具 TO-220-5/ TO263-5 V Regulator Eval Board RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V
TO-263AB 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
TO263SHT 制造商:Fairchild Semiconductor Corporation 功能描述:
TO-264 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:LinearL2 Power MOSFET w/Extended FBSOA
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*