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| 型號(hào)： | TO-220FP |
| 廠商： | Central Semiconductor Corp. |
| 英文描述： | 8&16 Amp Schottky Rectifiers |
| 中文描述： | 8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 71K |
| 代理商： | TO-220FP |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-263
TO-220AB
TO-220FP
1.7
1.7
3.3
R
θ
JC
Thermal Resistance Junction to Case Max.
O
C/W
R
θ
JA
Thermal Resistance Junction to Ambient Max.
62
O
C/W
ELectrical Characteristics
(T
J
=25
O
C, unless otherwise specified)
Symbol
V
(BR)DSS
Characteristic
Min.
600
-
-
-
-
2
Typ.
-
-
-
-
-
3
Max.
-
1
50
100
-100
4
Unit
V
uA
uA
nA
nA
V
S
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V, T
j
=125
O
C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.6A)*
Forward Transconductance (V
DS
=15V, I
D
=3.6A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
1
1.2
2
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
1498
158
29
14
19
40
26
35.5
8.1
14.1
V
GS
=0V, V
DS
=25V, f=1MHz
pF
(V
DD
=300V, I
D
=6A, R
G
=9.1
,
V
GS
=10V)*
ns
50
-
-
(V
DS
=300V, I
D
=6A, V
GS
=10V)*
nC
L
D
-
4.5
-
nH
L
S
-
7.5
-
nH
*: Pulse Test: Pulse Width
≤
300us, Duty Cycle
≤
2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
**: Negligible, Dominated by circuit inductance
Characteristic
Min.
-
-
-
Typ.
-
**
266
Max.
1.2
-
-
Units
V
ns
ns
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
S
=6A, V
GS
=0V, T
J
=25
o
C
I
S
=6A, d
IS
/d
t
=100A/us
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