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參數(shù)資料
| 型號(hào)： | TN815-B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SCR’s |
| 中文描述： | 可控硅的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 74K |
| 代理商： | TN815-B |
TN805/TN815-B
August 1998 - Ed: 1A
SCR’s
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
°
conduction angle)
Tc= 105
°
C
8
A
I
T(AV)
Mean on-state current
(180
°
conduction angle)
Tc= 105
°
C
5
A
I
TSM
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3 ms
73
A
tp = 10 ms
70
I
2
t
I
2
t Value for fusing
tp = 10ms
24.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 100 mA dI
G
/dt = 1 A/
μ
s.
100
A/
μ
s
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
Tl
Maximum lead temperature for soldering during 10s
260
°
C
ABSOLUTE MAXIMUM RATINGS
DPAK
I
TRMS
= 8 A
V
DRM
= 400 V to 800 V
I
GT
≤
5 mA and 15 mA
FEATURES
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
PNPN technology.
These parts are intended for general purpose
applications using mount technology.
DESCRIPTION
K
A
A
G
Symbol
Parameter
TN805 or TN815
Unit
400B
600B
700B
800B
V
DRM
V
RRM
Repetitive peak-off voltage
Tj = 125°C
400
600
700
800
V
1/5
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