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參數(shù)資料
| 型號： | TN2404K |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 240 -V (D-S) MOSFET |
| 中文描述： | N溝道240 -五（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | TN2404K |
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
www.vishay.com
2
Document Number: 72225
S-41761—Rev. B , 04-Oct-04
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
240
257
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.8
1.65
2.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 192 V, V
GS
= 0 V
1
A
T
J
= 55 C
10
On State Drain Current
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
=10 V
0.8
A
V
DS
= 10 V, V
GS
= 4.5 V
0.5
V
GS
= 10 V, I
D
= 0.3 A
2.2
4
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.2 A
2.3
4
V
GS
= 2.5 V, I
D
= 0.1 A
2.4
6
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.3 A
1.6
S
Diode Forward Voltage
V
SD
I
S
= 0.3 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
a
Total Gate Charge
Q
g
4.87
8
Gate-Source Charge
Q
gs
V
DS
= 192 V, V
GS
= 10 V, I
D
= 0.5 A
0.56
nC
Gate-Drain Charge
Q
gd
1.53
Turn On Time
Turn-On Time
t
d(on)
5
10
t
r
V
= 60 V, R
= 200
0.3 A, V
GEN
= 10 V, R
G
= 25
12
20
nS
turn-Off Time
t
d(off)
I
D
35
60
t
r
16
25
Notes
a.
b.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN2404K-T1 | N-Channel 240 -V (D-S) MOSFET |
| TN2404KL | N-Channel 240 -V (D-S) MOSFET |
| TN2404KL-TR1 | N-Channel 240 -V (D-S) MOSFET |
| TN2460L | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V，最小夾斷電流75mA的N溝道增強型MOSFET晶體管) |
| TN2460T | N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V，最小夾斷電流51mA的N溝道增強型MOSFET晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2404KL | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-92 |
| TN2404KL | 制造商:Vishay Intertechnologies 功能描述:MOSFET N TO-92 |
| TN2404KL-TR1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 240V 0.3A 3-Pin TO-226AA T/R |
| TN2404KL-TR1-E3 | 功能描述:MOSFET 240V 0.3A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2404K-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 240 -V (D-S) MOSFET |
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