參數資料
型號: TN0702
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓20V,低門限1.0V,N溝道增強型垂直DMOS結構場效應管)
中文描述: N溝道增強型場效應管垂直的DMOS(擊穿電壓20V的,低門限1.0V時,?溝道增強型垂直的DMOS結構場效應管)
文件頁數: 3/4頁
文件大?。?/td> 25K
代理商: TN0702
7-65
7
TN0702
Typical Performance Curves
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
TO-92
125
75
°
(
25
T
C
C)
Output Characteristics
5
4
3
2
1
0
0
V
DS
(volts)
I
D
Saturation Characteristics
0
2
4
6
10
8
V
DS
(volts)
I
D
Maximum Rated Safe Operating Area
0.1
100
10
1
0.1
1.0
10
TO-92 (DC)
V
DS
(volts)
I
D
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
2.0
0
5
1
2
3
4
G
F
(
I
D
(amperes)
TA = 125
°
C
D
P
1.0
TO-92
TC = 25
°
C
PD = 1W
V
GS
= 8V
0
0.01
0
V
GS
= 6V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
TA = 25
°
C
TC = 25
°
C
TA = -55
°
C
TO-92 (pulsed)
1.0
0
V
GS
= 8V
V
GS
= 6V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
5
4
3
2
1
0
V
GS
= 5V
V
GS
= 5V
5
10
15
20
V
DS
= 5V
相關PDF資料
PDF描述
TN2010T N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓200V,夾斷電流0.12A的N溝道增強型MOSFET晶體管)
TN2010T N-Channel Enhancement-Mode MOSFET Transistor
TN2124 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓240V,低門限2.0V,N溝道增強型垂直DMOS結構場效應管)
TN2130 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓300V,低門限2.4V,N溝道增強型垂直DMOS結構場效應管)
TN2404K N-Channel 240 -V (D-S) MOSFET
相關代理商/技術參數
參數描述
TN0702N3 功能描述:MOSFET 20V 1.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0702N3-G 功能描述:MOSFET 20V 1.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0702N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0702N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0702N3-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET