- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385003 > TN0606 (Supertex, Inc.) N-Channel Enhancement-Mode Vertical DMOS FETs PDF資料下載
參數(shù)資料
| 型號： | TN0606 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | TN0606 |
7-52
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
θ
jc
°
C/W
125
2.7
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
TO-220
*
I
D
(continuous) is limited by max rated T
j
.
0.8A
3.0A
3.2A
4.1A
1W
45W
0.8A
3.0A
3.2A
4.1A
70
TN0606/TN0610
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
BV
DSS
Parameter
Min
100
Typ
Max
Unit
Conditions
TN0610
TN0606
60
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C (note 2)
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3V, I
D
= 0.25A
V
GS
= 5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 0.75A
V
GS
= 10V, I
D
= 0.75A
V
DS
= 25V, I
D
= 1.0A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.2
2.0
3.0
6.7
15
R
DS(ON)
1.5
2.0
1.0
1.5
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
0.4
0.5
Input Capacitance
100
150
Common Source Output Capacitance
50
85
Reverse Transfer Capacitance
10
35
Turn-ON Delay Time
6
Rise Time
14
Turn-OFF Delay Time
16
Fall Time
16
Diode Forward Voltage Drop
0.8
1.8
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.5A
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
pF
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 25V
I
D
= 1.5A
R
GEN
= 25
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN0606N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0606N5 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0610N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0610 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight |
| TN0620 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓200V，低門限1.6V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN06060A(DC) | 制造商:Defender Security 功能描述:6-60mm DC Auto Iris Varifocal Lens |
| TN06060V | 制造商:Defender Security 功能描述:6-60mm Manual Iris Varifocal Lens |
| TN0606N3 | 功能描述:MOSFET 60V 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0606N3-G | 功能描述:MOSFET 60V 1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0606N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。