參數(shù)資料
型號(hào): TN0205AD
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V MOSFET
中文描述: N溝道20 - V MOSFET的
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 33K
代理商: TN0205AD
TN0205A/AD
Vishay Siliconix
New Product
www.vishay.com
11-2
Document Number: 70868
S-04279
Rev. B, 16-Jul-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 10 A
20
24
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 50 A
0.4
0.9
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
2
100
V
DS
= 20 V, V
GS
= 0 V
0.001
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
5
A
V
DS
= 5.0 V, V
GS
= 2.5 V
120
160
On-State Drain Current
a
I
D(on)
V
DS
= 8.0 V, V
GS
= 4.5 V
V
GS
= 2.5 V, I
D
=
150 mA
400
800
mA
1.6
2.5
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 250 mA
1.2
2.0
Forward Transconductance
a
g
fs
V
DS
= 2.5 V, I
D
= 50 mA
200
mS
Diode Forward Voltage
a
V
SD
I
S
= 50 mA, V
GS
= 0 V
0.7
1.2
V
Dynamic
Total Gate Charge
Q
g
350
450
Gate-Source Charge
Q
gs
V
DS
= 5.0 V,
V
GS
= 4.5 V, I
D
= 100 mA
25
pC
Gate-Drain Charge
Q
gd
100
Input Capacitance
C
iss
20
Output Capacitance
C
oss
V
= 5.0 V,
V
= 0 V, f = 1 MHz
DS
GS
14
pF
Reverse Transfer Capacitance
C
rss
5
Switching
b, c
Turn-On Delay Time
t
d(on)
7
12
Rise Time
t
r
V
= 3.0 V, R
= 100
I
D
= 0.25 A, V
GEN
= 4.5 V, R
G
= 10
25
35
Turn-Off Delay Time
t
d(off)
19
30
ns
Fall Time
t
f
9
15
Notes
a.
b.
c.
Pulse test; pulse width
For design only, not subject to production testing.
Switching time is essentially independent of operating temperature.
300 s, duty cycle
2%.
VNOJ
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