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參數(shù)資料
| 型號(hào)： | TN0104N8 |
| 廠商： | SUPERTEX INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 630 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA |
| 封裝： | SAME AS SOT-89, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | TN0104N8 |
7-31
7
TN0104
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Note: See Package Outline section for dimensions.
Package Options
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
Low threshold —1.6V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-243AA
(SOT-89)
G
D
S
D
TO-92
S G D
BV
DSS
/
BV
DGS
40V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
TO-92
TO-243AA*
Die
1.8
1.6V
2.0A
TN0104N3
—
TN0104ND
40V
2.0
1.6V
2.0A
—
TN0104N8
—
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available
Order Number / Package
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.
300
°
C
Product marking for TO-243AA:
Where *=2-week alpha date code
TN1L*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN0104ND | CONNECTOR ACCESSORY |
| TN0106 | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs |
| TN0106N3 | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs |
| TN0106ND | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs |
| TN0110 | N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN0104N8-G | 功能描述:MOSFET 40V 2Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0104ND | 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0106 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs |
| TN0106N3 | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0106N3-G | 功能描述:MOSFET 60V 3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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