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參數(shù)資料
| 型號： | TMS6648148 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4 194 304 4位/ 2 097 152 8位/ 1 048 576由16位4，銀行同步動態(tài)隨機存取記憶體 |
| 文件頁數(shù)： | 18/56頁 |
| 文件大?。?/td> | 958K |
| 代理商： | TMS6648148 |
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TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
18
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
interrupted bursts (continued)
CLK
DQ
DEAC or DCAB Command
(see Note A)
D
D
Ignored
nCCD = 2
WRT Command
(see Note A)
DQMx
nWR
NOTE A: For the purposes of this example, CAS latency = 2 and burst length > 2.
Figure 8. Write Burst Interrupted by DEAC/DCAB Command
power up
Device initialization should be performed after a power up to the full V
CC
level. After power is established, a
200-
μ
s interval is required (with no inputs other than CLK). After this interval, all banks of the device must be
deactivated. Eight REFR commands must be performed, and the mode register must be set to complete the
device initialization. See Figure 24.
相關PDF資料 |
PDF描述 |
|---|---|
| TMS6648148A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6641648 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6641648A | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS66441410 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS6644148 | 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TMS6648148A | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS664814DGE-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS664814DGE-8A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|4X2MX8|CMOS|TSOP|54PIN|PLASTIC |
| TMS6708-20DJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SRAM |
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