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參數資料
| 型號： | TMS46400PDJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 1048576字4位動態(tài)隨機存取記憶體 |
| 文件頁數： | 11/25頁 |
| 文件大?。?/td> | 657K |
| 代理商： | TMS46400PDJ |
TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
11
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
1.4 V
VCC = 3.3 V
CL = 100 pF
(see Note A)
Output Under Test
Output Under Test
CL = 100 pF
(see Note A)
(b) ALTERNATE LOAD CIRCUIT
(a) LOAD CIRCUIT
RL = 500
R1 = 1178
R2 = 868
NOTE A: CL includes probe and fixture capacitance.
Figure 3. Low-Voltage Load Circuits for Timing Parameters
RAS
CAS
A0–A9
W
DQ1–DQ4
tRC
Row
Column
Don’t Care
Don’t Care
Don’t Care
tRAS
tRP
tCSH
tRCD
tRSH
tCRP
tCAS
tRAD
tASC
tRAL
tASR
tRCS
tCAH
tRRH
tRCH
tCAC
tOFF
tAA
tCLZ
tRAC
tCP
See Note A
Hi-Z
tAR
tRAH
tCAL
Valid Data Out
Don’t Care
tOEZ
tROH
tOEA
Don’t Care
OE
tT
NOTE A: Output can go from the high-impedance state to an invalid-data state prior to the specified access time.
Figure 4. Read-Cycle Timing
A
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