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| 型號(hào)： | TMS46100 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304字1位動(dòng)態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大?。?/td> | 383K |
| 代理商： | TMS46100 |
TMS44100, TMS44100P, TMS46100, TMS46100P
4194304-WORD BY 1-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS561A – MARCH 1995 – REVISED JUNE 1995
6
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
’44100-60
’44100P-60
’44100-70
’44100P-70
’44100-80
’44100P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
VOH
VOL
High-level output voltage
IOH = – 5 mA
IOL = 4.2 mA
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All others = 0 V to VCC
VCC = 5.5 V,
CAS high
2.4
2.4
2.4
V
Low-level output voltage
0.4
0.4
0.4
V
II
Input current (leakage)
±
10
±
10
±
10
μ
A
IO
Output current (leakage)
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1
Read- or write-cycle current
(see Note 3)
VCC = 5.5 V,
Minimum cycle
105
90
80
mA
After 1 memory cycle,
RAS and CAS high,
VIH = 2.4 V (TTL)
After 1 memory cycle,
RAS and CAS high,
VIH = VCC – 0.2 V
(CMOS)
2
2
2
mA
ICC2
Standby current
’44100
1
1
1
mA
g ,
’44100P
500
500
500
μ
A
ICC3
Average refresh current
(RAS only or CBR)
(see Note 4)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
VCC = 5.5 V,
RAS low,
Minimum cycle,
105
90
80
mA
ICC4
Average page current
(see Notes 3 and 5)
tPC = minimum,
CAS cycling
90
80
70
mA
ICC6
Self-refresh current
(see Note 3)
CAS
≤
0.2 V,
tRAS and tCAS > 1000 ms
RAS = VIH,
Data out = enabled
RAS < 0.2 V,
500
500
500
μ
A
ICC7
Standby current, outputs
enabled (see Note 3)
CAS = VIL,
5
5
5
mA
ICC10
Battery-backup current
(with CBR)
tRC = 125
μ
s,
VCC – 0.2 V
≤
VIH
≤
6.5 V,
0 V
≤
VIL
≤
0.2 V,
W and OE = VIH,
Address and data stable
tRAS
≤
1 ms,
500
500
500
μ
A
For TMS44100P only
NOTES:
3. ICC max is specified with no load connected.
4. Measured with a maximum of one address change while RAS = VIL
5. Measured with a maximum of one address change while CAS = VIH
A
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| TMS46100P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
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| TMS46400DJ | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
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