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| 型號： | TMS44400-80DJ |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 1048576字4位動態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 7/25頁 |
| 文件大?。?/td> | 657K |
| 代理商： | TMS44400-80DJ |
TMS44400, TMS44400P, TMS46400, TMS46400P
1048576-WORD BY 4-BIT
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
’46400-60
’46400P-60
’46400-70
’46400P-70
’46400-80
’46400P-80
UNIT
MIN
2.4
MAX
MIN
2.4
MAX
MIN
2.4
MAX
VOH
High-level
High level
output voltage
IOH = – 2 mA (LVTTL)
IOH = – 100
μ
A (LVCMOS)
IOL = 2 mA (LVTTL)
IOL = 100
μ
A (LVCMOS)
VI = 0 V to 3.9 V, VCC = 3.6 V,
All others = 0 V to VCC
VO = 0 V to VCC, VCC = 3.6 V,
CAS high
V
VCC–0.2
VCC–0.2
VCC–0.2
VOL
Low-level
Low level
output voltage
0.4
0.4
0.4
V
0.2
0.2
0.2
II
Input current
(leakage)
±
10
±
10
±
10
μ
A
IO
Output current
(leakage)
±
10
±
10
±
10
μ
A
ICC1
Read- or
write-cycle
current
(see Note 3)
Minimum cycle,
VCC = 3.6 V
70
60
50
mA
ICC2
Standby
current
After one memory cycle,
RAS and CAS high,
VIH = 2 V (LVTTL)
After one memory
cycle, RAS and CAS
high,
VIH = VCC – 0.2 V
(LVCMOS)
2
2
2
mA
’46400
300
300
300
μ
A
’46400P
200
200
200
μ
A
ICC3
Average
refresh current
(RAS only or
CBR)
(see Note 4)
Minimum cycle,
RAS cycling,
CAS high (RAS only);
RAS low after CAS low (CBR)
VCC = 3.6 V,
70
60
50
mA
ICC4
Average page
current
(see Notes 3
and 5)
tPC = MIN,
RAS low,
VCC = 3.6 V,
CAS cycling
60
50
40
mA
ICC6
Self-refresh
current
(see Note 3)
CAS
≤
0.2 V,
tRAS and tCAS > 1000 ms
RAS < 0.2 V,
200
200
200
μ
A
ICC7
Standby
current,
outputs
enabled
(see Note 3)
RAS = VIH,
Data out = enabled
CAS = VIL,
5
5
5
mA
ICC10
Battery-backup
current
(with CBR)
tRC = 125
μ
s,
VCC – 0.2 V
≤
VIH
≤
3.9 V,
0 V
≤
VIL
≤
0.2 V,
W and OE = VIH,
Address and data stable
tRAS
≤
1 ms,
300
300
300
μ
A
For TMS46400P only
NOTES:
3. ICC MAX is specified with no load connected.
4. Measured with a maximum of one address change while RAS = VIL
5. Measured with a maximum of one address change while CAS = VIH
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS44400PDGA | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44400PDJ | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400PDJ | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400PDGA | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400DGA | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS44400-80SD | 制造商:Texas Instruments 功能描述:Dynamic RAM, Fast Page, 1M x 4, 20 Pin, Plastic, ZIP |
| TMS44400DGA | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44400DJ | 制造商:TI 制造商全稱:Texas Instruments 功能描述:1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44400DJ-60 | 制造商:Texas Instruments 功能描述: |
| TMS44400DJ-70 | 制造商:Texas Instruments 功能描述: |
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