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| 型號(hào)： | TMS417409A |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 4194304 4位擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 13/37頁(yè) |
| 文件大?。?/td> | 515K |
| 代理商： | TMS417409A |
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TMS416409A, TMS417409A, TMS426409A, TMS427409A
4194304 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS893B – AUGUST 1996 – REVISED APRIL 1997
13
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 3)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(OE)
Ci(RC)
Ci(W)
Co
A11 is NC (no internal connection) for TMS417409A and TMS427409A.
CAS and OE = VIH to disable outputs
NOTE 3: VCC = NOM supply voltage
±
10%, and the bias on pins under test is 0 V.
Input capacitance, A0–A11
5
pF
Input capacitance, OE
7
pF
Input capacitance, CAS and RAS
7
pF
Input capacitance, W
Output capacitance
7
pF
7
pF
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Note 4)
PARAMETER
’41x409A-50
’42x409A-50
’41x409A-60
’42x409A-60
’41x409A-70
’42x409A-70
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tAA
tCAC
tCPA
tRAC
tOEA
tCLZ
tREZ
tCEZ
tOEZ
tWEZ
NOTES:
Access time from column address (see Note 5)
25
30
35
ns
Access time from CAS (see Note 5)
13
15
18
ns
Access time from CAS precharge (see Note 5)
28
35
40
ns
Access time from RAS (see Note 5)
50
60
70
ns
Access time from OE (see Note 5)
13
15
18
ns
Delay time, CAS to output in low impedance
0
0
0
ns
Output buffer turn off delay from RAS (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from CAS (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from OE (see Note 6)
3
13
3
15
3
18
ns
Output buffer turn off delay from W (see Note 6)
3
13
3
15
3
18
ns
4. With ac parameters, it is assumed that tT = 2 ns.
5. For TMS42x409A, access times are measured with output reference levels of VOH = 2 V and VOL = 0.8 V.
6. The maximum values of tREZ, tCEZ, tOEZ, and tWEZ are specified when the output is no longer driven. Data in should not be driven
until one of the applicable maximum specifications is satisfied.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS426409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS4416 | 16,384 WORD BY 4 BIT DYNAMIC RAM |
| TMS44409P | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS417409ADJ-60 | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417800A | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY |
| TMS417809 | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:2097152-WORD BY 8-BIT HIGH-SPEED DRAMS |
| TMS417809A | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS418160 | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:1048576-WORD BY 16-BIT HIGH-SPEED DRAMS |
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