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參數(shù)資料
| 型號： | TMS29F800T-120BDBJE |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
| 中文描述： | 1048576 8位/ 524288由16位閃存 |
| 文件頁數(shù)： | 29/51頁 |
| 文件大?。?/td> | 685K |
| 代理商： | TMS29F800T-120BDBJE |
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TMS29F800T, TMS29F800B
1048576 BY 8-BIT/524288 BY 16-BIT
FLASH MEMORIES
SMJS835B – MAY 1997 – REVISED OCTOBER 1997
29
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
erase and program performance
PARAMETER
TEST CONDITIONS
Excludes 00H programming prior to
erasure
MIN
TYP
MAX
UNIT
Sector-erase time
1
15§
s
Program word time
Excludes system-level overhead
9
11
5200
3600§
50§
μ
s
μ
s
Program byte time
Excludes system-level overhead
9
9
Chip-programming time
Excludes system-level overhead
6
s
Erase/program cycles
The internal algorithms allow for 2.5-ms byte-program time. DQ5 = 1 only after a byte takes the theoretical maximum time to program. A minimal
number of bytes can require signficantly more programming pulses than the typical byte. The majority of the bytes program within one or two
pulses. This is demonstrated by the typical and maximum programming time listed above.
25
°
C, 5-V VCC, 100000 cycles, typical pattern
§Under worst-case conditions: 90
°
C, 5-V VCC, 100000 cycles
100000
1000000
cycles
latchup characteristics (see Note 10)
PARAMETER
MIN
MAX
UNIT
Input voltage with respect to VSS on all pins except I/O pins (including A9 and OE)
Input voltage with respect to VSS on all I/O pins
Current
– 1
13
V
– 1
VCC + 1
100
V
– 100
mA
NOTE 10: Includes all pins except VCC test conditions: VCC =5 V, one pin at a time
pin capacitance, all packages (see Note 11)
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
CIN
COUT
CIN2
NOTE 11: Test conditions: TA = 25
°
C, f = 1 MHz
Input capacitance
VIN = 0
VOUT = 0
VIN = 0
6
7.5
pF
Output capacitance
8.5
12
pF
Control pin capacitance
8
10
pF
data retention
PARAMETER
TEST CONDITIONS
150
°
C
125
°
C
MIN
10
20
MAX
UNIT
Minimum pattern data retention time
Years
P
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| TMS29F800B-120BDBJE | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
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