- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382635 > TMS29F800B-90BDCDL (Texas Instruments, Inc.) 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES PDF資料下載
參數(shù)資料
| 型號(hào)： | TMS29F800B-90BDCDL |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
| 中文描述： | 1048576 8位/ 524288由16位閃存 |
| 文件頁數(shù)： | 29/51頁 |
| 文件大?。?/td> | 685K |
| 代理商： | TMS29F800B-90BDCDL |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
TMS29F800T, TMS29F800B
1048576 BY 8-BIT/524288 BY 16-BIT
FLASH MEMORIES
SMJS835B – MAY 1997 – REVISED OCTOBER 1997
29
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
erase and program performance
PARAMETER
TEST CONDITIONS
Excludes 00H programming prior to
erasure
MIN
TYP
MAX
UNIT
Sector-erase time
1
15§
s
Program word time
Excludes system-level overhead
9
11
5200
3600§
50§
μ
s
μ
s
Program byte time
Excludes system-level overhead
9
9
Chip-programming time
Excludes system-level overhead
6
s
Erase/program cycles
The internal algorithms allow for 2.5-ms byte-program time. DQ5 = 1 only after a byte takes the theoretical maximum time to program. A minimal
number of bytes can require signficantly more programming pulses than the typical byte. The majority of the bytes program within one or two
pulses. This is demonstrated by the typical and maximum programming time listed above.
25
°
C, 5-V VCC, 100000 cycles, typical pattern
§Under worst-case conditions: 90
°
C, 5-V VCC, 100000 cycles
100000
1000000
cycles
latchup characteristics (see Note 10)
PARAMETER
MIN
MAX
UNIT
Input voltage with respect to VSS on all pins except I/O pins (including A9 and OE)
Input voltage with respect to VSS on all I/O pins
Current
– 1
13
V
– 1
VCC + 1
100
V
– 100
mA
NOTE 10: Includes all pins except VCC test conditions: VCC =5 V, one pin at a time
pin capacitance, all packages (see Note 11)
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
CIN
COUT
CIN2
NOTE 11: Test conditions: TA = 25
°
C, f = 1 MHz
Input capacitance
VIN = 0
VOUT = 0
VIN = 0
6
7.5
pF
Output capacitance
8.5
12
pF
Control pin capacitance
8
10
pF
data retention
PARAMETER
TEST CONDITIONS
150
°
C
125
°
C
MIN
10
20
MAX
UNIT
Minimum pattern data retention time
Years
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS29F800B-100BDCDE | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
| TMS29F800B-100BDCDL | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
| TMS29F800B-100BDCDQ | PT 8C 8#20 PIN RECP |
| TMS29F800B-100CDBJE | RECEPT |
| TMS29F800B-100CDBJL | 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS29F81606FML | 制造商:TI 功能描述:* |
| TMS-3/16-1.50-2 | 制造商:TE Connectivity 功能描述:5021710001 |
| TMS-3/16-1.50-3 | 制造商:TE Connectivity 功能描述:5023130001 |
| TMS-3/16-1.50-4 | 功能描述:電線鑒定 TMS-3/16-1.50-4 RoHS:否 制造商:TE Connectivity / Q-Cees 產(chǎn)品:Labels and Signs 類型: 材料:Vinyl 顏色:Blue 寬度:0.625 in 長度:1 in |
| TMS-3/16-1.50-4-CS7290 | 制造商:TE Connectivity 功能描述:502094N002 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。