參數(shù)資料
型號(hào)： TMS29F800B-80BDBJE
廠商： Texas Instruments, Inc.
英文描述： 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
中文描述： 1048576 8位/ 524288由16位閃存
文件頁數(shù)： 23/51頁
文件大?。?/td> 685K
代理商： TMS29F800B-80BDBJE
TMS29F800T, TMS29F800B
1048576 BY 8-BIT/524288 BY 16-BIT
FLASH MEMORIES
SMJS835B – MAY 1997 – REVISED OCTOBER 1997
23
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and ambient temperature
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VCCsupply current (standby)
PARAMETER
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TEST CONDITIONS
VCC = VCC MIN,
VCC = VCC MIN,
CE = VIH, VCC = VCC MAX
CE = VCC
±
0.2,
MIN
2.4 V
MAX
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mA
mA
UNIT
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TTL-input level
IOH = –2.5 mA
IOH = – 2.5 mA
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μ
A
mA
μ
A
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CMOS-input level
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NOTES:
100
35
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High-voltage current (standby)
4. ICC current in the read mode, switching at 6 MHz
5. ICC current while erase or program operation is in progress
6. Automatic sleep mode is entered when addresses remain stable for 300 ns.
7. IOUT = 0 mA
1
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VCC supply current
CC
y
Byte
VCC = VCC MAX
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40
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RESET = VSS
±
0.3 V
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Automatic sleep mode (see Note 6 and Note 7)
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VCC supply current (standby during reset)
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VIH = VCC
±
0.3 V, VIL = VSS
±
0.3 V
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μ
A
á
A
ICC5
100
capacitance over recommended ranges of supply voltage and ambient temperature
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Ci1
Ci2
Co
Input capacitance (All inputs except A9, CE, OE)
VI = 0 V,
VI = 0 V,
VO = 0 V,
f = 1 MHz
7.5
pF
Input capacitance (A9, CE, OE)
f = 1 MHz
9
pF
Output capacitance
f = 1 MHz
12
pF
P
相關(guān)PDF資料
PDF描述
TMS29F800T-90BDBJE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800B-90BDBJE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800T-120BDBJE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800B-120BDBJE 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
TMS29F800T-80CDBJL 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES
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