參數(shù)資料
型號： TMS28F400BZT90BDBJL
廠商： Texas Instruments, Inc.
英文描述： 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述： 8-BIT/262144由16位啟動塊閃存
文件頁數(shù)： 16/29頁
文件大?。?/td> 404K
代理商： TMS28F400BZT90BDBJL
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
16
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
(see Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage range, V
PP
(see Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range: All inputs except A9, RP
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RP, A9 (see Note 3)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range (see Note 4)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
, during read/erase/program:
– 0.6 V to 7 V
– 0.6 V to 14 V
– 0.6 V to V
CC
+ 1 V
– 0.6 V to 13.5 V
– 0.6 V to V
CC
+ 1 V
0
°
C to 70
°
C
. . . . . . . . . . . . .
– 40
°
C to 85
°
C
. . . . . . . . . . .
– 65
°
C to 150
°
C
L suffix
E suffix
Storage temperature range, T
stg
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
2. All voltage values are with respect to VSS.
3. The voltage on any input can undershoot to – 2 V for periods less than 20 ns.
4. The voltage on any output can overshoot to 7 V for periods less than 20 ns.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
recommended operating conditions
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase-suspend
4.5
5
5.5
V
VPP
Supply voltage
During read only (VPPL)
During write/erase/erase-suspend (VPPH)
0
6.5
V
11.4
12
12.6
V
VIH
High level dc input voltage
High-level dc input voltage
TTL
2
VCC + 0.5
VCC + 0.5
0.8
V
CMOS
VCC – 0.5
– 0.5
V
VIL
Low level dc input voltage
Low-level dc input voltage
TTL
V
CMOS
VSS – 0.2
VSS + 0.2
V
VLKO
VHH
VCC lock-out voltage from write/erase
RP unlock voltage
2
V
11.5
12
13
V
word/byte-write and block-erase performance (see Notes 5 and 6)
PARAMETER
’28F400BZx80
’28F400BZx90
UNIT
MIN
TYP
MAX
Main-block erase time
2.2
14
s
Main-block byte-program time
3.2
4.2
s
Main-block word-program time
1.6
2.1
s
Parameter/boot-block-erase time
0.32
7
s
NOTES:
5. Excludes system-level overhead
6. Typical values shown are at TA = 25
°
C, VPP = 12 V.
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