參數(shù)資料
型號： TMS28F400BZB90BDBJE
廠商： Texas Instruments, Inc.
英文描述： 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述： 8-BIT/262144由16位啟動塊閃存
文件頁數(shù)： 2/29頁
文件大?。?/td> 404K
代理商： TMS28F400BZB90BDBJE
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
2
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
description (continued)
Embedded program and block-erase functions are fully automated by an on-chip write state machine (WSM),
simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status
can be monitored by the on-chip status register to determine progress of program/erase tasks. The device
features user-selectable block erasure.
The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges:
0
°
C to 70
°
C and – 40
°
C to 85
°
C.
device symbol nomenclature
Temperature Range Designator
L =
0
°
C to 70
°
C
E = – 40
°
C to 85
°
C
Package Designator
DBJ =
Plastic Small-Outline Package
Program/Erase Endurance
B
= 10000 Cycles
Speed Designator
80 = 80 ns (
±
10% VCC tolerance)
90 = 90 ns (
±
10% VCC tolerance)
80
B
DBJ
L
TMS28F400BZT
Boot Block Location Indicator
T = Top Location
B = Bottom Location
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