參數(shù)資料
型號(hào): TMS28F400BZB80BDBJL
廠商: Texas Instruments, Inc.
英文描述: 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述: 8-BIT/262144由16位啟動(dòng)塊閃存
文件頁數(shù): 12/29頁
文件大?。?/td> 404K
代理商: TMS28F400BZB80BDBJL
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
12
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
BUS
OPERATION
COMMAND
COMMENTS
Write
Write-
program
setup
Data =
Addr =
40h or 10h
Address of
byte to be
programmed
Write
Write data
Data =
Byte to be
programmed
Address of
byte to be
programmed
Addr =
Read
Status-register data.
Toggle G or E to update
status register.
Standby
Check SB7
1 = Ready, 0 = Busy
Repeat for subsequent bytes.
Write FFh after the last byte-programming operation to
reset the device to read-array mode.
BUS
OPERATION
COMMAND
COMMENTS
Standby
Check SB3
1 = Detect VPP low
(see Note B)
Standby
Check SB4
1 = Byte-program error
(see Note C)
NOTES: A. Full status-register check can be done after each word or after a sequence of words.
B. SB3 must be cleared before attempting additional program/erase operations.
C. SB4 is cleared only by the clear-status-register command, but it does not prevent additional program operation attempts.
Figure 3. Automated Byte-Programming Flowchart
Start
Issue Program-Setup
Command and Byte Address
Issue Byte
Address/Data
Read Status-Register Bits
SB7 = 1
No
Full Status-Register
Check (optional)
See Note A
Yes
Byte-Program Completed
FULL STATUS-REGISTER-CHECK FLOW
Read Status-Register
Bits
SB3 = 0
No
Yes
VPP Range Error
SB4 = 0
No
Yes
Byte-Program
Failed
Byte-Program Passed
相關(guān)PDF資料
PDF描述
TMS28F400BZT80BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT80BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZB90BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
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