參數(shù)資料
型號(hào)： TMS28F400BZB80BDBJE
廠商： Texas Instruments, Inc.
英文描述： 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
中文描述： 8-BIT/262144由16位啟動(dòng)塊閃存
文件頁數(shù)： 19/29頁
文件大?。?/td> 404K
代理商： TMS28F400BZB80BDBJE
TMS28F400BZT, TMS28F400BZB
524288 BY 8-BIT/262144 BY 16-BIT
BOOT-BLOCK FLASH MEMORIES
SMJS400E – JUNE 1994 – REVISED JANUARY 1998
19
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
timing requirements over recommended ranges of supply voltage and operating free-air
temperature
write/erase operations — W-controlled writes
ALT.
’28F400BZx80
MIN
’28F400BZx90
MIN
UNIT
SYMBOL
MAX
MAX
tc(W)
tc(W)OP
tc(W)ERB
tc(W)ERP
tc(W)ERM
td(RPR)
th(A)
th(D)
th(E)
th(VPP)
th(RP)
tsu(A)
tsu(D)
tsu(E)
tsu(RP)
tsu(VPP)1
tw(W)
tw(WH)
trec(RPHW)
NOTE 10: A–1–A17 for byte-wide
Cycle time, write
tAVAV
tWHQV1
tWHQV2
tWHQV3
tWHQV4
tPHBR
tWHAX
tWHDX
tWHEH
tQVVL
tQVPH
tAVWH
tDVWH
tELWL
tPHHWH
tVPWH
tWLWH
tWLWL
tPHWL
80
90
ns
μ
s
s
Cycle time, duration of programming operation
6
7
Cycle time, erase operation (boot block)
0.3
0.4
Cycle time, erase operation (parameter block)
0.3
0.4
s
Cycle time, erase operation (main block)
0.6
0.7
s
Delay time, boot-block relock
100
100
ns
Hold time, A0–A17 (see Note 10)
10
10
ns
Hold time, DQ valid
0
0
ns
Hold time, E
10
10
ns
Hold time, VPP from valid status-register bit
Hold time, RP at VHH from valid status-register bit
Setup time, A0–A17 (see Note 10)
0
0
ns
0
0
ns
50
50
ns
Setup time, DQ
50
50
ns
Setup time, E before write operation
0
0
ns
Setup time, RP at VHH to W going high
Setup time, VPP to W going high
Pulse duration, W low
100
100
ns
100
100
ns
60
60
ns
Pulse duration, W high
20
30
ns
Recovery time, RP high to W going low
215
215
ns
相關(guān)PDF資料
PDF描述
TMS28F400BZB80BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT80BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJE 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT80BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
TMS28F400BZT90BDBJL 8-BIT/262144 BY 16-BIT BOOT-BLOCK FLASH MEMORIES
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