參數(shù)資料
型號(hào)： TMS28F010B-12
廠商： Texas Instruments, Inc.
英文描述： 131072 BY 8-BIT FLASH MEMORY
中文描述： 131072 8位快閃記憶體
文件頁數(shù)： 14/23頁
文件大?。?/td> 332K
代理商： TMS28F010B-12
TMS28F010B
131072 BY 8-BIT
FLASH MEMORY
SMJS824B – MAY 1995 – REVISED AUGUST 1997
14
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
TEST CONDITIONS
IOH = – 2.5 mA
IOH = – 100
μ
A
IOL = 5.8 mA
IOL = 100
μ
A
A9 = VID max
VI = 0 V to 5.5 V
VI = 0 V to 13 V
VO = 0 V to VCC
VPP = VPPH,
VPP = VPPL
VPP = VPPH
VPP = VPPH
MIN
2.4
MAX
UNIT
VOH
High level output voltage
High-level output voltage
V
VCC– 0.4
VOL
Low level output voltage
Low-level output voltage
0.45
V
0.1
IID
A9 algorithm-selection-mode current
200
±
1
±
200
±
10
200
±
10
μ
A
II
Input current (leakage)
All except A9
A9
μ
A
IO
Output current (leakage)
μ
A
μ
A
μ
A
mA
IPP1
VPPsupply current (read/standby)
VPP supply current (read/standby)
Read mode
IPP2
IPP3
VPP supply current (during program pulse)
VPP supply current (during flash erase)
VPP supply current (during program/erase-verify)
(see Note 4)
30
30
mA
IPP4
VPP = VPPH
5.0
mA
ICCS
VCCsupply current (standby)
TTL-input level
VCC = 5.5 V,
VCC = 5.5 V,
VCC = 5.5 V
f = 6 MHz,
E = VIH
E = VCC
E = VIL,
IOUT = 0 mA
E = VIL,
1
mA
μ
A
CMOS-input level
100
ICC1
VCC supply current (active read)
30
mA
ICC2
VCC average supply current (active write) (see Note 4)
VCC = 5.5 V,
Programming in progress
10
mA
ICC3
VCC average supply current (flash erase) (see Note 4)
VCC = 5.5 V,
Erasure in progress
E = VIL,
15
mA
ICC4
VCC average supply current (program/erase-verify)
(see Note 4)
VCC = 5.5 V,
VPP = VPPH,
Program/erase-verify in progress
E = VIL,
15
mA
VLKO
NOTE 4: Characterization data available.
VCC erase/write-lockout voltage
VPP = VPPH
2.5
V
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
Ci
Co
Capacitance measurements are made on sample basis only.
Input capacitance
VI = 0 V,
VO = 0 V, f = 1 MHz
f = 1 MHz
6
pF
Output capacitance
12
pF
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